J.‐F. Carlin

École Polytechnique Fédérale de Lausanne — Switzerland

Physics and Astronomy · Physical Sciences

16h-index1.2kcitations67works0.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(34), Semiconductor Quantum Structures and Devices(20), Semiconductor Lasers and Optical Devices(14), Semiconductor materials and devices(12), Ga2O3 and related materials(9)

Publications67 total

Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode
ArXiv.org·2025Open Access
Quantifying carbon site switching dynamics in GaN by electron holography
Physical Review Research·2025Open Access
Origin of giant enhancement of phase contrast in electron holography of modulation-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si43.svg" display="inline" id="d1e166"><mml:mi>n</mml:mi></mml:math>-type GaN
Ultramicroscopy·2024· 1 citedOpen Access
Influence of Microsecond Pulse Helium Plasma Flow on the Surface Morphology and Crystal Structure of the Photovoltaic Converters Based on CdS/CdTe
Journal of Nano- and Electronic Physics·2024Open Access
Smooth GaN membranes by polarization-assisted electrochemical etching
Applied Physics Letters·2021· 17 citedOpen Access
Interplay of intrinsic and extrinsic states in pinning and passivation of <i>m</i>-plane facets of GaN <i>n</i>-<i>p</i>-<i>n</i> junctions
Journal of Applied Physics·2020· 2 citedOpen Access
Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces
Applied Physics Letters·2017· 5 citedOpen Access
GaN superluminescent diodes and their applications
2016· 5 cited
Technology of integrated self-aligned E/D-mode n<sup>++</sup>GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Semiconductor Science and Technology·2016· 12 citedOpen Access
GaN-based superluminescent diodes with long lifetime
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2016· 12 citedOpen Access
Passive and Hybrid Mode-Locking From a Monolithic InGaN/GaN Laser Diode
2013
Early stage degradation of InAlN/GaN HEMTs during electrical stress
2012· 2 cited
Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.
HAL (Le Centre pour la Communication Scientifique Directe)·2012
Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode
2012Open Access
Low loss EEL spectroscopy performed on In<sub>x</sub>Al<sub>1‐x</sub>N layers grown by MOVPE: comparison between experiment and ab‐initio calculations
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 3 cited
Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Towards electronics at 1000 °C
2011· 1 cited
Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 35 cited
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Frequent Co-authors

N. Grandjean(30), M. Ilegems(15), E. Feltin(12), J. Kuzmı́k(9), R. Butté(8), M. Gonschorek(8), D. Pogány(7), A. Rudra(7), G. Pozzovivo(6), J. Dorsaz(5), R. P. Stanley(5), G. Strasser(5), M. Alomari(5), U. Oesterlé(4), R. Houdré(4), K. Čičo(4), Farid Medjdoub(4), Christophe Gaquière(4), M. A. Py(4), E. Kohn(4)