Toshishige Yamada

Santa Clara University — United States

Materials Science · Physical Sciences

28h-index3.2kcitations203works0.32yr avg
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Research Topics

Carbon Nanotubes in Composites(60), Graphene research and applications(47), Photonic and Optical Devices(31), Nanowire Synthesis and Applications(30), Quantum and electron transport phenomena(21)

Publications203 total

Stacked co-packaged Si-Ge-Si photodetectors with > 60 GHz bandwidth for near-infrared wavelength-simulation
Discover Electronics·2025Open Access
Stacked Co-Packaged Si–Ge–Si Photodetectors with >60 GHz Bandwidth for Near-Infrared Wavelength–Simulation
2025Open Access
New lumped/distributed equivalent circuit based theory for avalanche breakdown suppressed reverse-bias PIN photodetectors
Applied Physics A·2025· 2 citedOpen Access
Monte Carlo Molecular Dynamics Transport Simulations of Ge on Si multi-stackable high-speed p-i-n photodiode
2025Open Access
The Proposal for Reducing Waste of Broken Wooden Bats by Utilizing Upcycling
Journal of Japan Society of Sports Industry·2025Open Access
Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength
arXiv (Cornell University)·2024Open Access
Simulation of Ge on Si Photodiode with Photon-Trapping Micro-Nano Holes with -3db Bandwidth of >60 Ghz at Nir Wavelength
SSRN Electronic Journal·2024Open Access
CMOS Image Sensor With Micro–Nano Holes to Improve NIR Optical Efficiency: Holes on Top Surface Versus on Bottom
IEEE Sensors Journal·2023· 2 cited
Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures
Advanced Photonics Nexus·2023· 24 citedOpen Access
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
arXiv (Cornell University)·2023· 1 citedOpen Access
CMOS image sensor with micro-nano holes to improve NIR optical efficiency: micro-holes on top surface vs on bottom
arXiv (Cornell University)·2023Open Access
Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm
Journal of Nanophotonics·2023· 4 cited
Lumerical Simulation of Surface-illuminated Silicon PIN Photodiodes for Datacenter Interconnects
2022
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Optica·2022Open Access
Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
arXiv (Cornell University)·2022· 1 citedOpen Access
Optimization of CMOS image sensors with single photon-trapping hole per\n pixel for enhanced sensitivity in near-infrared
arXiv (Cornell University)·2021· 3 citedOpen Access
Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared
arXiv (Cornell University)·2021Open Access
A semiconductor physics based model for thermal characteristics in electronic electrolytic energy storage devices
Journal of Applied Physics·2021· 4 cited
Modeling of nanohole silicon <i>pin/nip</i> photodetectors: Steady state and transient characteristics
Nanotechnology·2021· 12 citedOpen Access
Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors
Advanced Photonics Research·2021· 2 citedOpen Access
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Frequent Co-authors

Ekaterina Ponizovskaya Devine(11), Shih-Yuan Wang(11), M. Saif Islam(11), Cary Y. Yang(11), Soroush Ghandiparsi(10), Aly F. Elrefaie(10), Yang Gao(9), Hilal Cansizoglu(9), Cesar Bartolo-Perez(9), Ahmed S. Mayet(8), Makoto Suzuki(6), Patrick Wilhite(6), Hasina H. Mamtaz(5), Drazen Fabris(4), Tsutomu Saito(4), M. Meyyappan(3), Jun Li(3), D. K. Ferry(3), Hou T. Ng(2), Kazim G. Polat(2)