D. Simeonov

University of California, Santa Barbara — United States

Physics and Astronomy · Physical Sciences

13h-index883citations27works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(21), Semiconductor Quantum Structures and Devices(15), Semiconductor materials and devices(8), Ga2O3 and related materials(6), Advancements in Semiconductor Devices and Circuit Design(4)

Publications27 total

Double embedded photonic crystals for extraction of guided light in light-emitting diodes
Applied Physics Letters·2012· 77 cited
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
Applied Physics Letters·2012· 57 cited
Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices
Electronics Letters·2011· 2 cited
Time‐resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11‐22) GaN facets
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 5 citedOpen Access
High-Efficiency Nitride-Base Photonic Crystal Light Sources
2010Open Access
Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
Physical Review B·2009· 6 citedOpen Access
Temperature mapping of Al<sub>0.85</sub>In<sub>0.15</sub>N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies
The European Physical Journal Applied Physics·2009· 6 citedOpen Access
Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 17 citedOpen Access
Synthesis and optical investigation of single polar GaN/AlN quantum dots
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2009Open Access
Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN∕AlGaN quantum wells
Applied Physics Letters·2008· 13 citedOpen Access
High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
Applied Physics Letters·2008· 62 citedOpen Access
Biexciton recombination in high quality GaN/AlGaN quantum wells
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 1 cited
Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements
Physical Review B·2008· 16 citedOpen Access
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
Physical Review B·2008· 68 citedOpen Access
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Journal of Physics D Applied Physics·2007· 325 citedOpen Access
Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells
Applied Physics Letters·2007· 61 citedOpen Access
Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
Journal of Crystal Growth·2007· 6 citedOpen Access
Efficient current injection scheme for nitride vertical cavity surface emitting lasers
Applied Physics Letters·2007· 30 citedOpen Access
Narrow UV emission from homogeneous GaN∕AlGaN quantum wells
Applied Physics Letters·2007· 24 citedOpen Access
Impact of disorder on high quality factor III-V nitride microcavities
Applied Physics Letters·2006· 70 citedOpen Access
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Frequent Co-authors

N. Grandjean(16), R. Butté(14), E. Feltin(14), J.‐F. Carlin(12), E. Goranova(5), Antonino Castiglia(4), James S. Speck(4), A. Vinattieri(4), T. Balabanska(4), F. Demangeot(3), Massimo Gurioli(3), F. Stokker‐Cheregi(3), M. Gonschorek(2), G. Christmann(2), J. Dorsaz(2), H.‐J. Buehlmann(2), Mauro Mosca(2), C. Pinquier(2), M. A. Py(2), J. Frandon(2)