Michael Barget

University of Luxembourg — LU

Engineering · Physical Sciences

8h-index157citations16works0.02yr avg
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Research Topics

Nanowire Synthesis and Applications(8), Photonic and Optical Devices(6), Semiconductor Quantum Structures and Devices(5), Silicon Nanostructures and Photoluminescence(4), Advanced MEMS and NEMS Technologies(3)

Publications16 total

Oxidation as Key Mechanism for Efficient Interface Passivation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Cu</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mi>Se</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> Thin-Film Solar Cells
Physical Review Applied·2020· 24 citedOpen Access
Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures
Nanoscience and Nanotechnology Letters·2017
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers
Journal of Applied Physics·2017· 22 cited
OPTIMIZATION STEPS OFGERMANIUM AS LIGHT EMITTER:STRAIN AND N-TYPE DOPING
2017
Strain Engineering in Highly Mismatched SiGe/SiHeterostructures
2017
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
Applied Physics Letters·2016· 12 cited
Tensile strain in Ge membranes induced by SiGe nanostressors
Applied Physics Letters·2016· 5 citedOpen Access
Photoluminescence of phosphorous doped Ge on Si (100)
Materials Science in Semiconductor Processing·2016· 9 citedOpen Access
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures
Materials Science in Semiconductor Processing·2016· 11 cited
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals
MRS Advances·2016· 1 citedOpen Access
SiGe nanostructures inducing tensile strain in suspended germanium membranes.
BOA (University of Milano-Bicocca)·2016
Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures
Advanced Materials·2015· 42 cited
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
Applied Physics Letters·2015· 21 citedOpen Access
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching
Microelectronic Engineering·2015· 10 citedOpen Access
SiGe nano-stressors for Ge strain-engineering
BOA (University of Milano-Bicocca)·2015
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence
BOA (University of Milano-Bicocca)·2014

Frequent Co-authors

Emiliano Bonera(11), Fabio Pezzoli(7), Francesco Montalenti(6), Monica Bollani(6), Daniel Chrastina(6), Mario Lodari(6), Fabio Isa(4), Marco Salvalaglio(4), Mojmír Meduňa(4), Arik Jung(4), Giovanni Isella(4), Rolf Erni(4), Philippe Niedermann(4), P. Gröning(4), H. von Känel(4), V. Mondiali(4), Yadira Arroyo Rojas Dasilva(3), Giovanni Capellini(3), Y. Yamamoto(3), Thomas Schroeder(3)