Lesheng Qiao

Collaborative Innovation Center of Advanced Microstructures — China

Engineering · Physical Sciences

7h-index166citations17works12.42yr avg
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Research Topics

Advanced Memory and Neural Computing(11), Semiconductor materials and devices(9), Semiconductor materials and interfaces(7), Ferroelectric and Negative Capacitance Devices(4), Neural dynamics and brain function(3)

Publications17 total

A Pupillary Light Reflex Inspired Self‐Adaptive Spiking Visual Neuron
Advanced Materials·2025
A flexible spiking hair sensillum for ultralow power density noncontact perception
Science Advances·2025· 2 citedOpen Access
A bioinspired in-materia analog photoelectronic reservoir computing for human action processing
Nature Communications·2025· 32 citedOpen Access
Flexible neuromorphic transistors for neuromorphic computing and perception application
Moore and More·2024· 8 citedOpen Access
One-Transistor One-Memristor Based Universal Oscillating Units for Spike-Encoding Artificial Sensory Neuron
IEEE Electron Device Letters·2024· 2 cited
Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors
IEEE Transactions on Electron Devices·2024· 3 cited
Toward a Brain–Neuromorphics Interface
Advanced Materials·2024· 49 cited
A Fourier neuromorphic visual system based on InGaZnO synaptic transistor
Applied Physics Letters·2024· 3 cited
Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er <sub>2</sub> O <sub>3</sub> /InP Heterointerface
IEEE Transactions on Electron Devices·2023· 2 cited
Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics
IEEE Transactions on Electron Devices·2023· 2 cited
Interface State Density Modification and Dielectric Reliability Enhancement of ErTi<sub>x</sub>O<sub>y</sub>/Al<sub>2</sub>O<sub>3</sub>/InP Laminated Stacks
IEEE Transactions on Electron Devices·2023· 2 cited
Fermi level unpinning achievement and transport modification in Hf1-Yb O /Al2O3/GaSb laminated stacks by doping engineering
Journal of Material Science and Technology·2022· 5 cited
Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer
Nanomaterials·2021· 7 citedOpen Access
Interface Optimization of Passivated Er<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism
IEEE Transactions on Electron Devices·2021· 17 cited
Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb<sub>2</sub>O<sub>3</sub>/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers
ACS Applied Electronic Materials·2021· 11 cited
Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb<sub>2</sub>O<sub>3</sub>/GaSb MOS Capacitors With (NH<sub>4</sub>)<sub>2</sub>S Solutions Passivation
IEEE Electron Device Letters·2020· 6 cited
Interface Chemistry and Dielectric Optimization of TMA-Passivated high-<i>k</i>/Ge Gate Stacks by ALD-Driven Laminated Interlayers
ACS Applied Materials & Interfaces·2020· 15 cited

Frequent Co-authors

Changjin Wan(7), Kailu Shi(7), Zebo Fang(7), Gang He(7), Jinyu Lü(6), Mengjiao Pei(5), Haotian Long(5), Qing Wan(5), Lin Hao(5), Hangyuan Cui(4), Qing Wan(3), Shuo Ke(3), Qian Gao(3), Shanshan Jiang(3), Baocheng Peng(3), Q. Xing(2), Yi Shi(2), Gang He(2), Yixin Zhu(2), Huiwu Mao(2)