Lang Zeng

Ministry of Education of the People's Republic of China — China

Engineering · Physical Sciences

22h-index1.8kcitations143works1.32yr avg
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Research Topics

Advanced Memory and Neural Computing(51), Semiconductor materials and devices(42), Ferroelectric and Negative Capacitance Devices(38), Advancements in Semiconductor Devices and Circuit Design(37), Magnetic properties of thin films(32)

Publications143 total

Functional differentiation and interactions among inferior, medial frontal and posterior temporal cortex in semantic control
Communications Biology·2025· 1 citedOpen Access
A Qualitative Study on Diagnosing Myopia Using the Ratio of Axial Length to Corneal Radius of Curvature
Journal of Clinical and Nursing Research·2025Open Access
Corrections to “A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design”
IEEE Electron Device Letters·2025
Transient Receptor Potential Channels as Key Regulators of Neuroinflammation in Neurological Disorders: Mechanistic Insights, Therapeutic Potentials, and Future Directions
CNS Neuroscience & Therapeutics·2025· 1 citedOpen Access
Discretization Methods for Quantum Drift-Diffusion Model: A Comparison Based on the Quasi-Fermi Scheme
2025
Experiment Demonstration of Novel Strong PUF With SOT P-Bit as Dynamic Entropy Source
IEEE Transactions on Electron Devices·2025
A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design
IEEE Electron Device Letters·2025· 2 cited
A Physics-Based Model of Two-Dimensional Ferroelectric Tunnel Junction With Monolayer and Multilayer Graphene Electrodes
IEEE Electron Device Letters·2025
Dynamic alterations of SEEG characteristics during peri-ictal period and localization of seizure onset zone
Neurobiology of Disease·2025· 2 citedOpen Access
Successive Probability Approach for 1-Bit Quantization Ising Computer Demonstrated With 8×2 Spin Orbit Torque P-Bits Array
IEEE Transactions on Electron Devices·2025· 1 cited
An Ultra-Low Power and Fast Ising Machine using Voltage-Controlled Magnetoresistive Random Access Memory
arXiv (Cornell University)·2025Open Access
A 32 kb 55 nm Radiation-Hardened SRAM Chip With SEU ≤1.1 E-11 Upsets/Bit-Day, SEL >107.1 MeV ⋅ cm²/mg, and TID >100 Krad(Si) for Space Applications
IEEE Transactions on Circuits and Systems I Regular Papers·2025
Enhanced decoupling strategy for magnetic levitated planar motor using model calibration and disturbance observer
Control Engineering Practice·2025· 1 cited
Wave Characteristics in the Vicinity of the Critical Radiation Frequency of a Horizontal Elastic Cylinder
Journal of Marine Science and Application·2025
Mapping the functional differentiation and interactions among the inferior, medial frontal and posterior temporal cortex in semantic control
2025Open Access
The association between dietary quality and biological aging: two-mediation analysis
Aging Clinical and Experimental Research·2025· 3 citedOpen Access
Strain- and dipole-induced interface states in gate-all-around transistors: Properties and implications for application
Physical Review Applied·2025
Calculation Optimization of Double-Free-Layer Magnetic Tunnel Junction
2025
Investigation on the Band Tail States in FinFETs at Cryogenic Temperature
IEEE Transactions on Electron Devices·2025· 3 cited
Passive Beamforming Metasurfaces for Microwave-Induced Thermoacoustic Imaging
IEEE Transactions on Biomedical Engineering·2025· 1 cited
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Frequent Co-authors

Deming Zhang(25), Weisheng Zhao(16), Gang Du(15), Jinfeng Kang(13), Youguang Zhang(12), Peng Huang(7), Bin Gao(7), Xiaoyan Liu(6), Tianqi Gao(6), Chengzhi Wang(5), You Wang(5), Yue Zhang(5), Jacques‐Olivier Klein(4), Kaili Zhang(4), Xiaoyan Liu(4), Xiaowan Qin(4), Weisheng Zhao(4), Yu Liu(4), Bing Chen(3), Juncheng Wang(3)