M.A. Pate

BT Research — United Kingdom

Physics and Astronomy · Physical Sciences

28h-index3.3kcitations171works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(132), Quantum and electron transport phenomena(69), Semiconductor Lasers and Optical Devices(45), Photonic and Optical Devices(35), Semiconductor materials and devices(20)

Publications171 total

Dispersion tolerant 200 Gb/s dual-wavelength IM/DD transmission with 33dB link budget for next generation PON
IET conference proceedings.·2023· 8 cited
A High Power Electro-Absorption Modulated Laser Integrated With SOA Suitable for 50G PON Application
IEEE Photonics Technology Letters·2023· 10 cited
50G-PON Upstream With Over 36dB Link Budget Using an SOA-PIN Based Receiver
IEEE Photonics Technology Letters·2022· 18 cited
Short circuit current enhancement in GaAs/AlGaAs MQW solar cells
arXiv (Cornell University)·2016· 2 citedOpen Access
THz generation using 800 to 1550 nm excitation of photoconductors
2009· 2 cited
Hot carriers in strain balanced quantum well solar cells
Conference record of the IEEE Photovoltaic Specialists Conference·2008· 4 cited
Strain-balanced quantum well concentrator cells from multiwafer production
Conference record of the IEEE Photovoltaic Specialists Conference·2008· 3 cited
Quantum well solar cells - pre-pilot production and on-sun testing results
Conference record of the IEEE Photovoltaic Specialists Conference·2008· 2 cited
Dual Multiple-Quantum-Well Solar Cells
EU PVSEC·2008Open Access
Multiplication characteristics of thin Al/sub x/Ga/sub 1-x/As(x=0 to 0.3) diodes
2002
Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW
2002
Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems
2002· 7 cited
Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions
2002
High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy
2002
A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 μm modulation grown by solid source MBE
2002
InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE
2002
Low-frequency impedance of quantized Hall conductors
Physical review. B, Condensed matter·2000· 8 cited
Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies
Applied Physics Letters·2000· 12 cited
A phase diagram for the breakdown of the odd integer quantum Hall effect
Physica E Low-dimensional Systems and Nanostructures·2000· 2 cited
Effect of quantum well location on single quantum well <i>p-i-n</i> photodiode dark currents
Journal of Applied Physics·1999· 47 cited
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Frequent Co-authors

G. Hill(20), M. S. Skolnick(15), L. Eaves(14), G. Hill(13), M. Henini(12), J.S. Roberts(12), M. L. Leadbeater(9), T. A. Fisher(9), R. Grey(9), O. H. Hughes(8), F. W. Sheard(7), P. Mistry(7), David G. Lidzey(6), Donal D. C. Bradley(6), G. A. Toombs(6), E.S. Alves(5), K.W.J. Barnham(5), D. M. Whittaker(5), J.P.R. David(5), J. W. Cockburn(5)