Peter J. Wellmann

Friedrich-Alexander-Universität Erlangen-Nürnberg — Germany

Engineering · Physical Sciences

29h-index4.0kcitations357works4.22yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(202), Semiconductor materials and devices(91), Silicon and Solar Cell Technologies(74), Thin-Film Transistor Technologies(67), Advanced ceramic materials synthesis(46)

Publications357 total

Close space physical vapor transport growth of SiC, doped layers and thin crystals
Journal of Crystal Growth·2025Open Access
<i>(Invited)</i> Doping of SiC during Standard and Close Space PVT Growth for Power Electronic and Photonic Applications
ECS Meeting Abstracts·2025
Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
Materials science forum·2025Open Access
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 2 citedOpen Access
Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth
Crystal Research and Technology·2024· 4 citedOpen Access
Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications
Materials Science in Semiconductor Processing·2024· 11 citedOpen Access
Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
MRS Communications·2024· 4 citedOpen Access
Synthesis and Characterization of BaZrS<sub>3</sub> Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS<sub>3</sub> on Zirconium Foil and Silicon Carbide Substrates
Advanced Engineering Materials·2024· 12 citedOpen Access
Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches
Crystals·2024· 7 citedOpen Access
Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
arXiv (Cornell University)·2024· 2 citedOpen Access
(Invited) Application of 3D in-Situ X-Ray Visualization to Track the Formation of Dislocation Clusters during PVT Growth of SiC
ECS Meeting Abstracts·2023
Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C
Crystals·2023· 7 citedOpen Access
Selection of essential records from a repository program to inform future generations: insights from a study for the Konrad repository
Safety of Nuclear Waste Disposal·2023Open Access
Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2023Open Access
&lt;i&gt;In Situ&lt;/i&gt; Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2023· 1 citedOpen Access
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2023Open Access
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2023· 2 citedOpen Access
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC
Crystal Research and Technology·2023· 5 citedOpen Access
Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties
Journal of Applied Crystallography·2023· 3 citedOpen Access
The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology
Diamond and Related Materials·2023· 7 citedOpen Access
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Frequent Co-authors

A. Winnacker(12), Thomas L. Straubinger(9), Dieter Hofmann(8), Mikael Syväjärvi(8), Roland Weingärtner(6), Matthias Bickermann(6), Philip Hens(6), Valdas Jokubavičius(5), Philipp Schuh(4), Ralf Müller(4), M. Selder(4), L. Kadinski(4), Jianwu Sun(4), Johannes Steiner(4), Ulrike Künecke(4), Francesco La Via(3), Marco Mauceri(3), A. Magerl(3), Haiyan Ou(3), Saskia Schimmel(3)