Xuanhu Chen

Nanjing University — China

Materials Science · Physical Sciences

31h-index3.5kcitations53works6.02yr avg
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Research Topics

Ga2O3 and related materials(35), ZnO doping and properties(33), Advanced Photocatalysis Techniques(20), Electronic and Structural Properties of Oxides(10), Perovskite Materials and Applications(4)

Publications53 total

Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3
Applied Physics Letters·2024· 6 cited
Hybrid plasmonic–dielectric metal-nanowire coupler for high-efficiency broadband nonlinear frequency conversion
Photonics Research·2022· 6 cited
Photoconductive and photovoltaic metal-semiconductor-metal <i>κ</i>-Ga<sub>2</sub>O<sub>3</sub> solar-blind detectors with high rejection ratios
Journal of Physics D Applied Physics·2022· 16 cited
Band alignment and polarization engineering in κ-Ga2O3/GaN ferroelectric heterojunction
Science China Physics Mechanics and Astronomy·2022· 22 cited
M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability
IEEE Electron Device Letters·2022· 35 cited
Unlocking the Single-Domain Heteroepitaxy of Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> via Phase Engineering
ACS Applied Electronic Materials·2021· 27 cited
Toward emerging gallium oxide semiconductors: A roadmap
Fundamental Research·2021· 146 citedOpen Access
Strain-driven phase manipulation of <i>α</i>- and <i>κ</i>-Ga2O3 by nanoepitaxial lateral overgrowth on embedded <i>α</i>-In2O3 submicron dots
Applied Physics Letters·2021· 4 cited
A self-powered solar-blind photodetector based on polyaniline/<i>α</i>-Ga2O3 p–n heterojunction
Applied Physics Letters·2021· 40 cited
<i>In situ</i> heteroepitaxial construction and transport properties of lattice-matched <b> <i>α</i> </b>-Ir2O3/<b> <i>α</i> </b>-Ga2O3 p-n heterojunction
Applied Physics Letters·2021· 39 cited
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
Applied Physics Letters·2021· 120 cited
Fundamental Properties and Power Electronic Device Progress of Gallium Oxide
2021· 2 cited
Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> Heterostructure
ACS Applied Electronic Materials·2021· 27 cited
Deep-level defects in gallium oxide
Journal of Physics D Applied Physics·2020· 119 cited
Misfit epitaxial strain manipulated transport properties in cubic In2O3 hetero-epilayers
Applied Physics Letters·2020· 6 cited
A 1.86-kV double-layered NiO/<b> <i>β</i> </b>-Ga2O3 vertical p–n heterojunction diode
Applied Physics Letters·2020· 221 cited
Band Alignment and Interface Recombination in NiO/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Type-II p-n Heterojunctions
IEEE Transactions on Electron Devices·2020· 122 cited
Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band
Applied Surface Science·2020· 29 cited
Ellipsometric determination of anisotropic optical constants of single phase Ga2O3 thin films in its orthorhombic and monoclinic phases
Optical Materials·2020· 31 cited
Anion Engineering Enhanced Response Speed and Tunable Spectral Responsivity in Gallium-Oxynitrides-Based Ultraviolet Photodetectors
ACS Applied Electronic Materials·2020· 25 cited
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Frequent Co-authors

Jiandong Ye(36), Shulin Gu(32), Fangfang Ren(31), Rong Zhang(14), Yang Xu(11), Hehe Gong(9), Youdou Zheng(8), Yue Kuang(7), J. Li(7), Tongchuan Ma(6), Hark Hoe Tan(6), C. Jagadish(6), Jinggang Hao(6), Hai Lu(5), Kun Tang(5), Zhengpeng Wang(5), Yi Zheng(5), Bin Liu(4), R. Zhang(4), Youdou Zheng(4)