Joel Davidsson

Linköping University — Sweden

Engineering · Physical Sciences

11h-index490citations45works3.32yr avg
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Research Topics

Semiconductor materials and devices(20), Diamond and Carbon-based Materials Research(17), Silicon Carbide Semiconductor Technologies(15), Electronic and Structural Properties of Oxides(11), Thin-Film Transistor Technologies(4)

Publications45 total

Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis
arXiv (Cornell University)·2025Open Access
Native defects and impurities in talcum quasi-2D layers
npj 2D Materials and Applications·2025Open Access
NV-like defects more common than four-leaf clovers: A perspective on high-throughput point defect data
Applied Physics Letters·2025Open Access
NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data
arXiv (Cornell University)·2025Open Access
Comparative study of divacancies in 3C-, 4H-, and 6H-SiC
Applied Physics Letters·2025· 1 citedOpen Access
Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with SCAN and r2SCAN meta-GGA functionals
Applied Physics Letters·2025· 8 citedOpen Access
High-Throughput Exploration of NV-like Color Centers Across Host Materials
arXiv (Cornell University)·2025Open Access
An NV− center in magnesium oxide as a spin qubit for hybrid quantum technologies
npj Computational Materials·2025· 3 citedOpen Access
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
arXiv (Cornell University)·2025Open Access
Advancing Single-Photon Emitters in Silicon Nitride
2025
ADAQ-SYM: Automated symmetry analysis of defect orbitals
Computer Physics Communications·2024· 3 citedOpen Access
Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:math>
Physical Review Applied·2024· 7 citedOpen Access
Native defects and impurities in talcum quasi-2D layers
arXiv (Cornell University)·2024Open Access
An NV- center in magnesium oxide as a spin qubit for hybrid quantum technologies
arXiv (Cornell University)·2024Open Access
Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC
arXiv (Cornell University)·2024Open Access
Discovery of atomic clock-like spin defects in simple oxides from first principles
Nature Communications·2024· 15 citedOpen Access
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4<i>H</i>- and 6<i>H</i>-SiC
Physical review. B./Physical review. B·2024· 12 citedOpen Access
Na in diamond: high spin defects revealed by the ADAQ high-throughput computational database
npj Computational Materials·2024· 10 citedOpen Access
Chlorine vacancy in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">SiC</mml:mi></mml:mrow></mml:math>: An NV-like defect with telecom-wavelength emission
Physical review. B./Physical review. B·2023· 13 citedOpen Access
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
arXiv (Cornell University)·2023Open Access
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Frequent Co-authors

Igor A. Abrikosov(26), Rickard Armiento(21), Viktor Ivády(20), Nguyên Tiên Són(13), Ádám Gali(11), Takeshi Ohshima(9), Ivan G. Ivanov(7), Oscar Bulancea-Lindvall(7), Giulia Galli(4), William Stenlund(4), Abram L. Falk(3), Paul V. Klimov(3), D. D. Awschalom(3), Danial Shafizadeh(3), Kristian S. Thygesen(3), Nazar Delegan(2), Samuel J. Whiteley(2), S. O. Hruszkewycz(2), Martin V. Holt(2), F. Joseph Heremans(2)