Tomokazu Domon

Toshiba (Japan) — Japan

Engineering · Physical Sciences

9h-index211citations18works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(10), GaN-based semiconductor devices and materials(8), Advanced DC-DC Converters(4), Advancements in Semiconductor Devices and Circuit Design(3), Metallic Glasses and Amorphous Alloys(3)

Publications18 total

Non-Destructive Current Measurement for Surface Mounted Power MOSFET on VRM Board Using Magnetic Field Probing Technique
IEEJ Transactions on Electronics Information and Systems·2010· 3 cited
Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique
IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs·2009· 9 cited
Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit
IEICE technical report. Speech·2009
Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT
PESC record·2008· 14 cited
Gallium Nitride power HEMT for high switching frequency power electronics
2007· 39 cited
High Power Density Converter using SiC-SBD
2007· 21 cited
High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
IEICE Technical Report; IEICE Tech. Rep.·2007
High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT
2006· 12 cited
Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD
2006· 5 cited
Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
IEEE Electron Device Letters·2006· 59 cited
380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier
2006· 20 cited
Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
Materials science forum·2005Open Access
Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
Materials science forum·2005· 1 cited
Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability
2004· 15 cited
A Built-in Type Amorphous Torque Sensor for an Induction Motor
IEEE Translation Journal on Magnetics in Japan·1988· 3 cited
Development of An Amorphous Torque Sensor for Induction Motors
IEEE Translation Journal on Magnetics in Japan·1987· 1 cited
A new contact amorphous torque sensor with wide dynamic range and quick response
IEEE Transactions on Magnetics·1987· 9 cited
A built-in type amorphous torque sensor for an induction motor.
Journal of the Magnetics Society of Japan·1987Open Access

Frequent Co-authors

Ichiro Omura(10), Wataru Saito(8), K. Tsuda(7), Masakazu Yamaguchi(6), M. Sahashi(4), K. Inomata(4), T. Kobayashi(3), Isao Suzuki(3), Masahiko Kuraguchi(2), Yoshiharu Takada(2), Tomohiro Nitta(2), Yorito Kakiuchi(2), Yoshiko Ikeda(2), Yoshihiro Yamaguchi(2), Yusuke Kawaguchi(2), Makoto Mizukami(2), Seiji Imai(2), Kozo Kinoshita(2), Tetsuo Hatakeyama(2), Takashi Shinohe(2)