Guilherme A. S. Ribeiro

Universidade Federal de Minas Gerais — Brazil

Physics and Astronomy · Physical Sciences

8h-index289citations20works2.02yr avg
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Research Topics

Topological Materials and Phenomena(9), Graphene research and applications(6), 2D Materials and Applications(6), Quantum Dots Synthesis And Properties(3), Chalcogenide Semiconductor Thin Films(3)

Publications20 total

Investigation of MoTe nanowires in honeycomb and kagome lattices: Dirac cones and flat bands
Journal of Physics Condensed Matter·2025
Raman Spectroscopy on Free-Base Meso-tetra(4-pyridyl) Porphyrin under Conditions of Low Temperature and High Hydrostatic Pressure
Molecules·2024· 4 citedOpen Access
Vibrational and electronic properties of Na<sub>2</sub>Ti<sub>6</sub>O<sub>13</sub>
Journal of Raman Spectroscopy·2023· 5 citedOpen Access
Electronic gap stability of two-dimensional tin monosulfide phases: Towards optimal structures for electronic device applications
Applied Surface Science·2022· 5 cited
Multiple strong topological gaps and hexagonal warping in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
Physical review. B./Physical review. B·2022· 12 cited
Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices
ACS Applied Nano Materials·2021
Effects of dimensionality and excitation energy on the Raman tensors of triclinic ReSe<sub>2</sub>
Journal of Raman Spectroscopy·2021· 10 cited
Electronic Gap Stability of Two-Dimensional Tin Monosulfide Phases: Towards Optimal Structures for Electronic Device Applications
SSRN Electronic Journal·2021Open Access
High-performance wide bandgap perovskite solar cells fabricated in ambient high-humidity conditions
Materials Advances·2021· 31 citedOpen Access
Origin of the complex Raman tensor elements in single-layer triclinic ReSe <sub>2</sub>
2D Materials·2020· 25 cited
Activation of topological insulator phase in kagomé-type bilayers by interlayer coupling: The cases of Ni(CO)4 and Pd(CO)4
Applied Physics Letters·2020· 6 cited
Direct observation of large strain through van der Waals gaps on epitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">T</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>/graphite: Pseudomorphic relaxation and the role of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> layers on the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">T</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mi>y</mml:mi></mml:msub></mml:mrow></mml:math> topological insulator series
Physical Review Materials·2020· 8 cited
Bi <sub>2</sub> :Bi <sub>2</sub> Te <sub>3</sub> stacking influence on the surface electronic response of the topological insulator Bi <sub>4</sub> Te <sub>3</sub>
Electronic Structure·2020· 10 cited
Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles
Physical review. B./Physical review. B·2018· 89 citedOpen Access
Strong anharmonicity in the phonon spectra of PbTe and SnTe evaluated via the stochastic self-consistent harmonic approximation.
theses.fr (ABES)·2017Open Access
Strong anharmonicity in the phonon spectra of PbTe and SnTe evaluated via the stochastic self-consistent harmonic approximation.
2017
Estudo por primeiros princípios das propriedades estruturais e eletrônicas dos compostos Bi2Te3 e Bi2Se3
Americanae (AECID Library)·2013Open Access
A combined LEED and DFT surface structure determination of Cu3Au(001): Evidence of a surface stacking fault
Surface Science·2013· 2 cited
Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi<sub>2</sub>Te<sub>3</sub>
Nano Letters·2013· 36 cited
Surface structure of Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>(111) determined by low-energy electron diffraction and surface x-ray diffraction
Physical Review B·2013· 46 citedOpen Access

Frequent Co-authors

Mário S. C. Mazzoni(8), Ângelo Malachias(6), R. Magalhães‐Paniago(6), Thaís Chagas(5), Wendell Simões e Silva(4), Orlando J. Silveira(3), Diogo Duarte dos Reis(2), E.A. Soares(2), Geovani C. Resende(2), Jessica S. Lemos(2), Daniel Rhodes(2), Luis Balicas(2), Mauricio Terrones(2), Cristiano Fantini(2), Bruno R. Carvalho(2), M. A. Pimenta(2), Thiago C. Ribeiro(2), Daniele C. Ferreira(2), Douglas R. Miquita(2), Lorenzo Paulatto(1)