Ce Ning

BOE Technology Group (China) — China

Engineering · Physical Sciences

9h-index268citations36works2.02yr avg
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Research Topics

Thin-Film Transistor Technologies(30), ZnO doping and properties(11), Silicon and Solar Cell Technologies(7), Transition Metal Oxide Nanomaterials(6), Semiconductor materials and devices(5)

Publications36 total

High-Performance Stable In<sub>2</sub>O<sub>3</sub> Field-Effect Transistors by Atomic Layer Deposition Process
2025
High-Performance In<sub>2</sub>O<sub>3</sub>/ZnO Heterojunction Thin-Film Transistors Fabricated by Low-Temperature Process
2025
Compensation Technique for Modulating Threshold Voltage of High-Mobility InZnO/ZnO Heterojunction Transistors
2025
High-mobility and high-stability In<sub>2</sub>O3/Ga<sub>2</sub>O<sub>3</sub> heterojunction thin-film transistor
2025
Performance Enhancement of InGaZnO Thin-Film Transistors via Rapid Cooling Process and Their Application in Logic Circuits
IEEE Transactions on Electron Devices·2025
Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress
Materials Science in Semiconductor Processing·2024· 2 cited
Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process
Advanced Electronic Materials·2024· 8 citedOpen Access
Ultrasonic Treatment-Induced Enhancement of Mechanical and Electrical Properties in InGaZnO Thin-Film Transistors
IEEE Transactions on Electron Devices·2024
Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation
Applied Physics Letters·2024· 1 cited
P‐17: Development of Vertical Oxide Channel Thin Film Transistor Based on Hard‐Mask Etching
SID Symposium Digest of Technical Papers·2024· 3 cited
P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production
SID Symposium Digest of Technical Papers·2024
P‐24: Ultra‐low power consumption notebook LCD with high on‐state current metal oxide device
SID Symposium Digest of Technical Papers·2024· 1 cited
The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect
Applied Physics Letters·2024· 5 cited
Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer
Materials Science in Semiconductor Processing·2024· 10 cited
Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors
SSRN Electronic Journal·2024Open Access
Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels
IEEE Transactions on Electron Devices·2023· 14 cited
85‐2: 2117PPI VR LCD with ultra‐high aperture opening ratio
SID Symposium Digest of Technical Papers·2023· 3 citedOpen Access
43‐1: <i>Invited Paper:</i> The Application and Future Development Trend of Oxide Technology in the Meta‐Universe
SID Symposium Digest of Technical Papers·2023· 1 citedOpen Access
P‐18: Development of Oxide UHD Panel LCD with High Mobility for Notebook PC
SID Symposium Digest of Technical Papers·2023
The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer
Vacuum·2023· 19 cited
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Frequent Co-authors

Guangcai Yuan(26), Bin Liu(11), Shuo Zhang(10), Jian Guo(10), Zhinong Yu(9), Dan Kuang(8), Fengjuan Liu(7), Hehe Hu(7), Zongchi Bao(7), Dawei Shi(7), Le Weng(5), Xianwen Liu(5), Lingyan Liang(4), Min Guo(4), Hongtao Cao(4), Chuan Liu(4), Wei Yang(4), Ke Wang(4), Baiqi Jiang(4), Congyang Wen(4)