M. Brooks Tellekamp

National Renewable Energy Laboratory — United States

Engineering · Physical Sciences

15h-index596citations59works3.32yr avg
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Research Topics

Advanced Memory and Neural Computing(18), Semiconductor materials and devices(16), Machine Learning in Materials Science(15), Ga2O3 and related materials(15), GaN-based semiconductor devices and materials(13)

Publications59 total

Resistive switching in SrFeO2.5/Nb:SrTiO3 heterostructures with growth-controlled film orientation
Applied Physics Letters·2025
Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films
Journal of Applied Physics·2025Open Access
Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes
APL Energy·2025· 2 citedOpen Access
Erratum: “Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates” [Appl. Phys. Lett. <b>125</b>, 172106 (2024)]
Applied Physics Letters·2025
Basin-Size Mapping: Prediction of Metastable Polymorph Synthesizability Across TaC–TaN Alloys
Journal of the American Chemical Society·2025· 2 cited
Low leakage current in heteroepitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Al</mml:mi><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sc</mml:mi><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> ferroelectric films on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>
Physical Review Applied·2025· 10 citedOpen Access
Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates
Applied Physics Letters·2024· 1 citedOpen Access
Designing <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Ta</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math> Virtual Substrates for Vertical <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> Power Electronics Devices
PRX Energy·2024· 2 citedOpen Access
Electrically-driven IMT and volatile memristor behavior in NdNiO<sub>3</sub> films
Journal of Physics D Applied Physics·2024· 6 citedOpen Access
Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
arXiv (Cornell University)·2024Open Access
Improving luminescence response in ZnGeN<sub>2</sub>/GaN superlattices: defect reduction through composition control
Journal of Physics D Applied Physics·2024· 3 citedOpen Access
NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature
Applied Physics Letters·2024· 18 citedOpen Access
Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior
IEEE Transactions on Electron Devices·2024· 4 citedOpen Access
Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting
Journal of Applied Physics·2024· 1 citedOpen Access
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
arXiv (Cornell University)·2024Open Access
NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature
arXiv (Cornell University)·2024Open Access
Rapid screening of molecular beam epitaxy conditions for monoclinic (In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> alloys
Journal of Materials Chemistry A·2024· 7 citedOpen Access
Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications
physica status solidi (a)·2023· 7 citedOpen Access
STEM data
Figshare·2023Open Access
Structure, defects, and optical properties of commensurate GaN/ZnGeN<sub>2</sub>/GaN double heterojunctions
Journal of Materials Chemistry C·2023· 6 citedOpen Access
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Frequent Co-authors

W. Alan Doolittle(17), Andriy Zakutayev(14), Adele C. Tamboli(13), Joshua C. Shank(13), Eric S. Toberer(8), Moira K. Miller(7), Celeste L. Melamed(6), Stephan Lany(6), Kingsley Egbo(6), Rekha R. Schnepf(5), Ann L. Greenaway(5), Karen N. Heinselman(5), Vladan Stevanović(5), Jacob Cordell(4), Dennice M. Roberts(4), Jordan D. Greenlee(4), William A. Callahan(4), Cheng‐Wei Lee(4), Geoff L. Brennecka(3), Sage R. Bauers(3)