P. Polakowski

Fraunhofer Institute for Photonic Microsystems — Germany

Engineering · Physical Sciences

25h-index5.1kcitations41works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Ferroelectric and Negative Capacitance Devices(38), Semiconductor materials and devices(34), MXene and MAX Phase Materials(15), Advanced Memory and Neural Computing(8), Advancements in Semiconductor Devices and Circuit Design(6)

Publications41 total

A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage
2019· 134 cited
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD
Applied Physics Letters·2019· 116 cited
Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory
IEEE Transactions on Electron Devices·2019· 25 cited
Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
2019· 13 cited
Investigation of Switching Characteristics for Silicon Doped Hafnium Oxide FeFET
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
IEEE Transactions on Electron Devices·2018· 278 cited
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
Applied Physics Letters·2018· 138 cited
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
2017· 523 cited
14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
2017· 227 cited
Kelvin Force Probe Microscopy of Ferroelectric Si:HfO<sub>2</sub>
ECS Meeting Abstracts·2017
Ferroelectric HfO<sub>2</sub> thin film testing and whole wafer mapping with non‐contact corona‐Kelvin metrology (Phys. Status Solidi A 7∕2017)
physica status solidi (a)·2017
Ferroelectric HfO<sub>2</sub> thin film testing and whole wafer mapping with non‐contact corona‐Kelvin metrology
physica status solidi (a)·2017
Novel ferroelectric FET based synapse for neuromorphic systems
2017· 269 cited
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
ACS Applied Materials & Interfaces·2017· 322 cited
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
2016· 388 cited
High endurance strategies for hafnium oxide based ferroelectric field effect transistor
2016· 99 citedOpen Access
Impact of field cycling on HfO<sub>2</sub> based non-volatile memory devices
2016· 8 cited
A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
AIP Advances·2016· 84 citedOpen Access
La-doped ZrO<sub>2</sub> based BEoL decoupling capacitors
2016· 1 cited
Correlation between the macroscopic ferroelectric material properties of Si:HfO <sub>2</sub> and the statistics of 28 nm FeFET memory arrays
Ferroelectrics·2016· 27 cited
page 1 of 3Next →

Frequent Co-authors

Johannes Müller(33), Thomas Mikolajick(22), Stefan Müller(15), Stefan Slesazeck(14), Konrad Seidel(14), S. Riedel(13), S. Flachowsky(11), Halid Mulaosmanovic(10), J. Ocker(9), Raik Hoffmann(9), Ekaterina Yurchuk(7), Wenke Weinreich(7), Tarek Ali(7), Thomas Kämpfe(7), M. Czernohorsky(7), Paul Jarman(6), U. Schröder(6), B. Pätzold(6), Kati Kühnel(6), P. Steinke(6)