J. Strand

Micron (United States) — United States

Physics and Astronomy · Physical Sciences

13h-index976citations26works0.02yr avg
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Research Topics

Quantum and electron transport phenomena(15), Magnetic properties of thin films(13), Semiconductor materials and devices(6), Semiconductor Quantum Structures and Devices(4), Physics of Superconductivity and Magnetism(4)

Publications26 total

Challenges for high-density 16Gb ReRAM with 27nm technology
2015· 17 cited
Challenges for high-density 16Gb ReRAM with 27nm technology
2015· 7 cited
A copper ReRAM cell for Storage Class Memory applications
2014· 62 cited
An Update on Emerging Memory: Progress to 2Xnm
2012· 25 cited
A stackable cross point Phase Change Memory
2009· 280 cited
Spin injection across the Fe/GaAs interface: Role of interfacial ordering
Physical Review B·2009· 44 cited
Electron spin dynamics and hyperfine interactions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mn>0.1</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>0.9</mml:mn></mml:msub><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>spin injection heterostructures
Physical Review B·2005· 30 citedOpen Access
Spin injection into semiconductors: the role of the Fe/Al/sub x/Ga/sub 1-x/As interface
2005· 2 cited
Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2005· 23 cited
Effect of interfacial reactions on spin injection from Fe contacts into (Al,Ga)As
Bulletin of the American Physical Society·2005
Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures
Bulletin of the American Physical Society·2005
Spin injection and relaxation in ferromagnet-semiconductor heterostructures
Physical Review B·2005· 150 citedOpen Access
Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures
Applied Physics Letters·2005· 161 citedOpen Access
Spin injection from the Heusler alloy Co/sub 2/MnGe into Al/sub 0.1/Ga/sub 0.9/As/GaAs heterostructures
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.·2005· 3 cited
Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures
arXiv (Cornell University)·2004Open Access
Dynamic Nuclear Polarization by Electrical Spin Injection
APS·2004
Spin Relaxation and Hyperfine Effects in Electrical Spin Injection
APS March Meeting Abstracts·2004
Spin injection into semiconductors : The role of the Fe/AlxGa1-xAs interface
2004· 1 cited
Electron spin dynamics and hyperfine interactions in ferromagnet-semiconductor heterostructures
2004
Nuclear magnetic resonance in a ferromagnet–semiconductor heterostructure
Applied Physics Letters·2003· 17 citedOpen Access
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Frequent Co-authors

P. A. Crowell(19), C. J. Palmstrøm(18), Christoph Adelmann(13), B. D. Schultz(13), X. Lou(12), A. F. Isakovic(9), Xin Dong(4), Jing Xie(4), Nirmal Ramaswamy(4), A. K. Petford‐Long(3), Scott Sills(3), Shuichiro Yasuda(3), Alessandro Calderoni(3), Katsuhisa Aratani(3), M. R. Fitzsimmons(3), Jean‐Paul Barnes(2), D. M. Carr(2), Christopher Cardon(2), D. Kau(1), Stephen Tang(1)