P. L. Bonanno

United States Naval Research Laboratory — United States

Physics and Astronomy · Physical Sciences

9h-index213citations24works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(11), Metal and Thin Film Mechanics(8), ZnO doping and properties(6), Semiconductor materials and devices(5), Ga2O3 and related materials(5)

Publications24 total

Defects in 4H-SiC epilayers affecting device yield and reliability
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 12 cited
Evolution of lattice distortions in 4H-SiC wafers with varying doping
Scientific Reports·2020· 12 citedOpen Access
High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography
APL Materials·2018· 29 citedOpen Access
Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography
Microscopy and Microanalysis·2018Open Access
Nano-selective-area growth of group III-nitrides on silicon and conventional substrates
SMARTech Repository (Georgia Institute of Technology)·2016
Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates
Nanotechnology·2016· 4 cited
AlN/Si(111)およびGaNテンプレート上のナノ領域選択成長による単結晶ナノピラミッドBGaN
Nanotechnology·2016
Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates
Applied Physics Letters·2015· 18 citedOpen Access
Nanometer scale characterizations of InGaN nanostructures grown on GaN template
HAL (Le Centre pour la Communication Scientifique Directe)·2015
High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
Applied Physics Letters·2014· 14 citedOpen Access
Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction
Thin Solid Films·2013· 2 cited
Nondestructive mapping of chemical composition and Structural quality of Group III-Nitride nanowires using submicron beam synchrotron-based X-ray diffraction
SPIRE - Sciences Po Institutional REpository·2012
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
Journal of Crystal Growth·2010· 32 cited
Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2009· 4 cited
Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction
SPIRE - Sciences Po Institutional REpository·2009
Epitaxial checkerboard arrangement of nanorods in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>ZnMnGaO</mml:mtext></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>films studied by x-ray diffraction
Physical Review B·2008· 6 citedOpen Access
X‐ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi‐facet GaN ridges
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 2 cited
Intrafacet migration effects in InGaN∕GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction
Applied Physics Letters·2008· 10 cited
Highly Aligned Epitaxial Nanorods with a Checkerboard Pattern in Oxide Films
Bulletin of the American Physical Society·2008
Transconductance of a double quantum dot system coupled to a microcavity
Bulletin of the American Physical Society·2008
page 1 of 2Next →

Frequent Co-authors

A. A. Sirenko(11), A. Kazimirov(9), Sean M. O’Malley(6), G. Patriarche(6), W.H. Goh(5), S. Gautier(5), T. Moudakir(5), Zhonghou Cai(5), A. Ramdane(5), L. Le Gratiet(5), Youssef El Gmili(5), Nadeemullah A. Mahadik(4), Suresh Sundaram(4), Renaud Puybaret(4), Paul L. Voss(4), Jean‐Paul Salvestrini(4), J. Martin(4), Badreddine Assouar(4), Sehyun Park(3), Y. Horibe(3)