N. B. Smirnov

Lomonosov Moscow State University — Russia

Physics and Astronomy · Physical Sciences

40h-index5.6kcitations261works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(189), Ga2O3 and related materials(159), ZnO doping and properties(102), Semiconductor materials and devices(90), Semiconductor Quantum Structures and Devices(43)

Publications261 total

The effect of duct size, sample size, and fuel composition on concurrent flame spread over large cellulose samples in microgravity
Combustion and Flame·2022· 10 cited
1 GeV proton damage in β-Ga2O3
Journal of Applied Physics·2021· 16 cited
Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3
Journal of Applied Physics·2021· 16 cited
On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
Journal of Alloys and Compounds·2021· 41 cited
Experimental estimation of electron–hole pair creation energy in <b> <i>β</i> </b>-Ga2O3
Applied Physics Letters·2021· 55 cited
Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation
APL Materials·2020· 48 citedOpen Access
Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga <sub>2</sub> O <sub>3</sub> vertical rectifiers
Journal of Physics D Applied Physics·2020· 25 cited
Accessing the soot-related radiative heat feedback in a flame spreading in microgravity: optical designs and associated limitations
Proceedings of the Combustion Institute·2020· 22 citedOpen Access
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Journal of Physics D Applied Physics·2020· 5 citedOpen Access
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Journal of Alloys and Compounds·2020· 10 citedOpen Access
Assessing mobile ions contributions to admittance spectra and current-voltage characteristics of 3D and 2D/3D perovskite solar cells
Solar Energy Materials and Solar Cells·2020· 24 citedOpen Access
Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3
Journal of Applied Physics·2020· 32 cited
Electric field dependence of major electron trap emission in bulk β-Ga <sub>2</sub> O <sub>3</sub> : Poole–Frenkel effect versus phonon-assisted tunneling
Journal of Physics D Applied Physics·2020· 27 cited
Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga <sub>2</sub> O <sub>3</sub>
Journal of Physics D Applied Physics·2020· 39 cited
Ion Dynamics in Single and Multi-Cation Perovskite
ECS Journal of Solid State Science and Technology·2020· 11 cited
Editors’ Choice—Electrical Properties and Deep Traps in α-Ga<sub>2</sub>O<sub>3</sub>:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy
ECS Journal of Solid State Science and Technology·2020· 51 citedOpen Access
Thick-Walled Cylinder Core Tests with Flushing by Various Fluids: Results and Practical Applications
SPE Russian Petroleum Technology Conference·2019· 1 cited
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Journal of Applied Physics·2019· 25 citedOpen Access
Hydrogen plasma treatment of <b> <i>β</i> </b>-Ga2O3: Changes in electrical properties and deep trap spectra
Applied Physics Letters·2019· 52 cited
Deep trap analysis in green light emitting diodes: Problems and solutions
Journal of Applied Physics·2019· 16 cited
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Frequent Co-authors

A. Y. Polyakov(49), S. J. Pearton(43), A. V. Govorkov(26), F. Ren(19), E. B. Yakimov(16), Ivan Shchemerov(15), А. В. Черных(12), In‐Hwan Lee(11), А. I. Kochkova(10), A.A. Vasil'ev(8), Alexander V. Markov(7), Е. А. Кожухова(6), N. G. Kolin(6), П. С. Вергелес(6), A. Osinsky(6), D. P. Norton(5), Joan M. Redwing(5), A. V. Govorkov(5), M. E. Overberg(5), J. M. Zavada(5)