V. S. Kharlamov

Ioffe Institute — Russia

Engineering · Physical Sciences

6h-index96citations18works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(8), Semiconductor materials and devices(6), Ion-surface interactions and analysis(4), Diamond and Carbon-based Materials Research(3), nanoparticles nucleation surface interactions(3)

Publications18 total

Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
Physics of the Solid State·2019· 3 cited
Kinetic modeling of the growth of copper clusters of various heights in subsurface layers of lead
Technical Physics Letters·2015· 6 cited
Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si
Journal of Computational and Theoretical Nanoscience·2012· 8 cited
Evolution of subsurface nanocavities in copper under argon bombardment and annealing
Applied Surface Science·2012· 4 cited
Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method
Technical Physics·2008· 7 cited
Carbon surface diffusion and SiC nanocluster self-ordering
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2006· 4 cited
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
Materials science forum·2006· 3 cited
Growth of three-dimensional SiC clusters on Si modelled by KMC
Computational Materials Science·2005· 20 cited
Computer simulation of neutron transmutation doping of isotopically engineered heterostructures
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2004· 5 cited
Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
Technical Physics Letters·2004· 4 cited
Atomic scale modelling of nanosize Ni3Al cluster beam deposition on Al, Ni and Ni3Al (1 1 1) surfaces
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2002· 16 cited
Size distribution of copper nanoclusters in amorphous carbon
Technical Physics Letters·1999· 1 cited
Concentration Profiles in Laser-Deposited Ni/C and W/C Multilayers
physica status solidi (a)·1998
A Computational Model for the Formation of (SiC)<sub>1-x</sub>(AIN)<sub>x</sub> Structures by Hot, High-Dose N<sup>+</sup> and Al<sup>+</sup> Co-Implants in 6H-SiC
Materials science forum·1998· 4 cited
Small defects in YBCO single crystals: Tc after neutron irradiation and annealing
Physica C Superconductivity·1997· 7 cited
Physical model of the formation of a periodic structure on the surface of pyrolytic graphite under high-energy ion bombardment
Technical Physics Letters·1997· 2 cited
Computer simulation of the annealing of point magnetic-flux pinning centers in a neutron-irradiated YBaCuO single crystal
Technical Physics Letters·1996· 2 cited
Computer simulation of the changes in the composition of complex and multilayer structures during ion sputtering
JTePh·1996

Frequent Co-authors

Yu. V. Trushin(13), D. V. Kulikov(8), J. Pezoldt(6), Alexander Schmidt(5), M. N. Lubov(5), K. L. Safonov(4), Е. Е. Журкин(4), O. Ambacher(3), R. A. Suris(3), V. Cimalla(2), С. А. Королев(2), Joerg Pezoldt(2), Evgeni E. Zhurkin(1), M. Hou(1), F.M. Sauerzopf(1), Miklós Antal Werner(1), H.W. Weber(1), Д. В. Куликов(1), O. Kurnosikov(1), Yu. V. Trushin(1)