Michihiko Kariya

Meijo University — Japan

Physics and Astronomy · Physical Sciences

11h-index622citations25works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(21), Metal and Thin Film Mechanics(13), Ga2O3 and related materials(9), ZnO doping and properties(7), Semiconductor Quantum Structures and Devices(4)

Publications25 total

Control of strain in GaN using an In doping-induced hardening effect
Physical review. B, Condensed matter·2001· 31 cited
Control of strain in GaN by a combination of H2 and N2 carrier gases
Journal of Applied Physics·2001· 21 cited
Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas
Journal of Crystal Growth·2000· 5 cited
Mass transport and the reduction of threading dislocation in GaN
Applied Surface Science·2000· 32 cited
Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy
Applied Surface Science·2000· 15 cited
The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics·2000· 11 cited
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
Applied Physics Letters·2000· 108 cited
Effect on GaN/Al<sub>0.17</sub>Ga<sub>0.83</sub>N and Al<sub>0.05</sub>Ga<sub>0.95</sub>N/Al<sub>0.17</sub>Ga<sub>0.83</sub>N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics·2000· 10 cited
Effect on GaN/Al 0.17 Ga 0.83 N and Al 0.05 Ga 0.95 N/Al 0.17 Ga 0.83 N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000
Structural characterization of Al1−In N lattice-matched to GaN
Journal of Crystal Growth·2000· 9 cited
Mass Transport, Faceting and Behavior of Dislocations in GaN
MRS Internet Journal of Nitride Semiconductor Research·2000· 7 citedOpen Access
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
Applied Physics Letters·1999· 49 cited
Mosaic Structure of Ternary Al<sub> 1-x</sub>In<sub>x</sub>N Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics·1999· 24 cited
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
Journal of Applied Physics·1999· 117 cited
The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
1999· 1 cited
Structural and optical properties of Al 1-xInxN grown by metal organic vapor-phase epitaxy
1999
Mass Transport, Faceting and Behavior of Dislocations in GaN
MRS Proceedings·1999· 3 cited
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth·1998· 98 cited
Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
Applied Physics Letters·1998· 34 cited
Structural Properties of Al<sub> 1- x</sub>In<sub> x</sub>N Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics·1998· 38 cited
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Frequent Co-authors

Shugo Nitta(21), Hiroshi Amano(21), Isamu Akasaki(18), Shigeo Yamaguchi(17), Tetsuya Takeuchi(7), Christian Wetzel(7), Takayuki Kashima(6), Masayoshi Kosaki(5), Yohei Yukawa(4), S. Yamaguchi(4), Hisaki Kato(3), Isamu Akasaki Isamu Akasaki(3), Y. Yukawa(3), K Terayama(2), Yoshiko TAGUCHI(1), Yuzuru Taguchi(1), Seiya Watanabe(1), Motoaki Iwaya(1), Ikuo Konishi(1), Shunichiro Fujii(1)