J. Singh

Centre for Development of Advanced Computing — India

Physics and Astronomy · Physical Sciences

37h-index4.4kcitations193works3.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(143), Semiconductor Lasers and Optical Devices(77), Quantum and electron transport phenomena(37), Photonic and Optical Devices(35), Advanced Semiconductor Detectors and Materials(32)

Publications193 total

Hybrid Quantum-Classical Algorithm for Digital Filter Design: Bridging NISQ Optimisation
2025
Advancements and challenges in polymer-based separators for lithium-ion batteries
Energy storage materials·2025· 12 cited
Visible light -driven NiCo2O4 Nano-Urchins: A High-Performance Photocatalyst for Ciprofloxacin Degradation via Peroxymonosulfate Enhancement
SSRN Electronic Journal·2025Open Access
Got Milk-y Lavage?
2024
An observation of multiferroism in (1−x)BCZT–xNZFO-based 3-0 type composites
Bulletin of Materials Science·2023· 3 cited
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
Applied Physics Letters·2009· 145 cited
Effect of image charges in the drain delay of AlGaN∕GaN high electron mobility transistors
Applied Physics Letters·2008· 14 cited
+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures
Applied Physics Letters·2007· 55 cited
Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length
IEEE Transactions on Electron Devices·2006· 54 cited
A high-speed multiquantum well-based optical header reader for fiber network packet switching
Conference on Lasers and Electro-Optics Europe·2005
Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots
Journal of Physics D Applied Physics·2005· 44 citedOpen Access
Sources of Transconductance Collapse in III–V Nitrides—Consequences of Velocity-Field Relations and Source/Gate Design
IEEE Transactions on Electron Devices·2005· 34 cited
AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources
2005· 2 cited
Velocity Overshoot Effects and Scaling Issues in III–V Nitrides
IEEE Transactions on Electron Devices·2005· 28 cited
Polar Heterostructure for Multifunction Devices: Theoretical Studies
IEEE Transactions on Electron Devices·2005· 42 cited
Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrent
2004· 1 cited
Velocity overshoot effects and transit times in III-V nitride HFETs : A Monte Carlo study
2004
Polar fleterostructure for multi-function devices: theoretical studies
2004· 1 cited
Quantum dot infrared photodetector design based on double-barrier resonant tunnelling
Electronics Letters·2004· 27 cited
Red shift of the excited state due to a non-degenerate biexciton in self-organized quantum dots
OSA Trends in Optics and Photonics Series·2004
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Frequent Co-authors

P. Bhattacharya(24), Hongtao Jiang(8), Theodore B. Norris(7), John Hinckley(7), Yuh‐Renn Wu(5), Junji Urayama(4), K. Kamath(4), Jamie Phillips(4), G.P. Kothiyal(3), Madhusudan Singh(3), Nacer Debbar(3), B. Kochman(2), A.L. Gutierrez-Aitken(2), N. Chervela(2), T. Sosnowski(2), J. Laskar(2), John P. Loehr(2), J. M. Arias(2), M. Zandian(2), Siddhartha Sankar Ghosh(2)