Meixiao Wang

ShanghaiTech University — China

Physics and Astronomy · Physical Sciences

20h-index1.8kcitations56works5.32yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Topological Materials and Phenomena(25), Graphene research and applications(21), 2D Materials and Applications(20), Advanced Condensed Matter Physics(9), Electronic and Structural Properties of Oxides(7)

Publications56 total

Simultaneous <i>Q</i> <sub>0</sub> and <i>E</i> <sub>acc</sub> Enhancement in 1.3 GHz Niobium Cavities: Role of Carbon-Modulated Oxygen Segregation at the Atomic Scale
ACS Applied Materials & Interfaces·2026
Interwoven magnetic kagome metal overcomes geometric frustration
Nature Materials·2025· 5 citedOpen Access
Thickness-dependent topological phases and flat bands in rhombohedral multilayer graphene
Science Bulletin·2025· 2 citedOpen Access
Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle‐Resolved Photoemission Spectroscopy
Advanced Science·2025· 3 citedOpen Access
Association of cumulative non-high-density lipoprotein cholesterol to high-density lipoprotein cholesterol ratio with the risk of cardiometabolic disease
Frontiers in Cardiovascular Medicine·2024· 9 citedOpen Access
Two-dimensional crystalline platinum oxide
Nature Materials·2024· 19 citedOpen Access
Status of Nano-ARPES endstation at BL07U of Shanghai Synchrotron Radiation Facility
arXiv (Cornell University)·2024Open Access
Spatial- and spin-resolution ARPES and magnetism beamline at SSRF
Nuclear Science and Techniques·2024· 10 cited
Nano-ARPES Endstation at BL07U of Shanghai Synchrotron Radiation Facility
Synchrotron Radiation News·2024· 5 cited
Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
arXiv (Cornell University)·2024Open Access
Wafer‐Scale Epitaxial Growth of the Thickness‐Controllable Van Der Waals Ferromagnet CrTe<sub>2</sub> for Reliable Magnetic Memory Applications
Advanced Functional Materials·2023· 21 cited
Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2
National Science Review·2023· 21 citedOpen Access
Electronic origin of half-metal to semiconductor transition and colossal magnetoresistance in spinel <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Hg</mml:mi><mml:msub><mml:mi>Cr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>
Physical review. B./Physical review. B·2023· 7 citedOpen Access
Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers
Advanced Materials·2023· 17 citedOpen Access
Observation of Mott instability at the valence transition of <i>f</i>-electron system
National Science Review·2023· 6 citedOpen Access
Topology hierarchy of transition metal dichalcogenides built from quantum spin Hall layers
arXiv (Cornell University)·2023· 1 citedOpen Access
Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2
Science China Materials·2023· 20 citedOpen Access
Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2
arXiv (Cornell University)·2023· 1 citedOpen Access
Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4
arXiv (Cornell University)·2022· 1 citedOpen Access
Metal to Mott Insulator Transition in Two-dimensional 1T-TaSe$_2$
arXiv (Cornell University)·2022Open Access
page 1 of 3Next →

Frequent Co-authors

Yulin Chen(22), Zhongkai Liu(20), Lexian Yang(17), Jinfeng Jia(11), Zhongkai Liu(11), Haifeng Yang(10), Canhua Liu(8), Yiwei Li(8), Aiji Liang(8), Dong Qian(6), Ding Pei(6), Yanfeng Guo(6), Lixuan Xu(6), Sung‐Kwan Mo(6), Wujun Shi(6), Cheng Chen(5), Juan Jiang(5), Hongtao Yuan(5), Gang Li(5), Huijun Zheng(5)