H. Eisele

Otto-von-Guericke University Magdeburg — Germany

Physics and Astronomy · Physical Sciences

25h-index1.9kcitations117works1.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(77), GaN-based semiconductor devices and materials(37), Semiconductor materials and devices(31), Surface and Thin Film Phenomena(31), Advanced Semiconductor Detectors and Materials(18)

Publications117 total

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al<i>x</i>Ga1−<i>x</i>N <i>m</i>-plane surfaces
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2024· 1 citedOpen Access
Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Applied Physics Express·2023· 3 citedOpen Access
Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2023· 1 cited
Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110)
Physical Review Materials·2022· 2 cited
GaAs(110) Surface Modifications Introduced by Hydrogen
2022
From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001)
Journal of Physics D Applied Physics·2021· 2 cited
Electronic structure of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo>×</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mi>R</mml:mi><mml:msup><mml:mn>30</mml:mn><mml:mo>∘</mml:mo></mml:msup><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">B</mml:mi></mml:mrow></mml:math> surface from theory and photoemission spectroscopy
Physical review. B./Physical review. B·2021· 11 cited
Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
Physical review. B./Physical review. B·2020· 5 citedOpen Access
Interplay of intrinsic and extrinsic states in pinning and passivation of <i>m</i>-plane facets of GaN <i>n</i>-<i>p</i>-<i>n</i> junctions
Journal of Applied Physics·2020· 2 citedOpen Access
Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-3×3R30°
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2020· 5 cited
Submonolayer Quantum Dots
Springer series in solid-state sciences·2020· 3 cited
Optical and Structural Properties of Nitride Based Nanostructures
Springer series in solid-state sciences·2020· 3 cited
Arrangement and electronic properties of cobalt phthalocyanine molecules on B-Si(111)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo>×</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt></mml:mrow></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>R</mml:mi><mml:msup><mml:mn>30</mml:mn><mml:mo>∘</mml:mo></mml:msup></mml:mrow></mml:math>
Physical review. B./Physical review. B·2019· 13 cited
Iuliacumite: a novel two-dimensional chemical short range order in a wurtzite single monolayer InAs 1-x Sb x shell on InAs nanowires
HAL (Le Centre pour la Communication Scientifique Directe)·2019Open Access
Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs<sub>1–<i>x</i></sub>Sb<sub><i>x</i></sub> Shell on InAs Nanowires
Nano Letters·2019· 3 citedOpen Access
Valence band structure and effective masses of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>GaN</mml:mi><mml:mo>(</mml:mo><mml:mn>10</mml:mn><mml:mover><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>0</mml:mn><mml:mo>)</mml:mo></mml:math>
Physical review. B./Physical review. B·2019· 6 cited
Properties of the In<sub>2</sub>O<sub>3</sub>(111) and the $\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}(100)$ non-polar surfaces
2019
Adsorbtion of Oxygen and Hydrogen Atoms on the GaAs(110) Surface
2019
Investigation of Bi-induced three-dimensional InAs nanostructures on GaAs (110) by cross-sectional scanning tunnelling microscopy (Conference Presentation)
2019
Dislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM
JuSER (Forschungszentrum Jülich)·2019
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Frequent Co-authors

M. Dähne(33), A. Lenz(25), D. Bimberg(18), Rainer Timm(15), Л. Д. Иванова(15), Udo W. Pohl(12), Ph. Ebert(12), S. K. Becker(6), A. Strittmatter(6), Christopher Prohl(6), T. Kalka(5), K. Pötschke(5), O. Flebbe(4), M. Dähne‐Prietsch(4), J. Grabowski(4), M. Schnedler(4), Rafal E. Dunin–Borkowski(4), C. Preinesberger(3), F. Heinrichsdorff(3), A. Krost(3)