Yuan-Hung Hsiao

Taiwan Semiconductor Manufacturing Company (Taiwan) — Taiwan

Engineering · Physical Sciences

10h-index478citations25works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(24), Microwave Engineering and Waveguides(13), Advanced Power Amplifier Design(13), Photonic and Optical Devices(4), Advancements in Semiconductor Devices and Circuit Design(3)

Publications25 total

Design of a 60-GHz High-Output Power Stacked- FET Power Amplifier Using Transformer-Based Voltage-Type Power Combining in 65-nm CMOS
IEEE Transactions on Microwave Theory and Techniques·2018· 51 cited
A 38-GHz power amplifier with high efficiency and low quiescent power for phased array applications in 65-nm CMOS process
2017· 3 cited
A compact and low DC power distributed amplifier with cascaded gain stages using signal-reused technique in 0.18-pm CMOS
2017· 7 cited
A 36–40 GHz full 360° ultra-low phase error passive phase shifter with a novel phase compensation technique
2017· 5 cited
A 36–40 GHz full 360° ultra-low phase error passive phase shifter with a novel phase compensation technique
2017· 18 cited
A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS
2017· 8 cited
A 4.6-GHz Class-F<sup>−1</sup> high power CMOS power amplifier
2017· 2 cited
A K-band transformer based power amplifier with 24.4-dBm output power and 28% PAE in 90-nm CMOS technology
2017· 21 cited
90nm CMOS技術による24.4dBm出力パワーと28%PAEを持つKバンド変圧器ベース電力増幅器【Powered by NICT】
IEEE Conference Proceedings·2017
Millimeter-wave amplifiers in 40-nm CMOS
2016· 1 cited
Design of a $V$ -Band 20-dBm Wideband Power Amplifier Using Transformer-Based Radial Power Combining in 90-nm CMOS
IEEE Transactions on Microwave Theory and Techniques·2016· 59 cited
A 77-GHz 2T6R Transceiver With Injection-Lock Frequency Sextupler Using 65-nm CMOS for Automotive Radar System Application
IEEE Transactions on Microwave Theory and Techniques·2016· 64 cited
A 57–78 GHz Frequency Tripler MMIC in 65-nm CMOS
IEEE Microwave and Wireless Components Letters·2016· 37 cited
5-GHz transformer combined class-F<sup>−1</sup> power amplifier
2016· 4 cited
A 60-GHz 20.6-dBm symmetric radial-combining wideband power amplifier with 20.3% peak PAE and 20-dB gain in 90-nm CMOS
2016· 10 cited
A 2.8–6 GHz high-efficiency CMOS power amplifier with high-order harmonic matching network
2016· 6 cited
A W-band LO-chain with injection-locked frequency sextupler and medium power amplifier using 65-nm CMOS technology for automotive radar applications
2015 Asia-Pacific Microwave Conference (APMC)·2015· 6 cited
A broadband doubler with harmonic rejection in 90nm CMOS
2015· 6 cited
A v-band power amplifier with adaptive bias circuit to save quiescent DC power consumption using 90-nm CMOS technology
Asia-Pacific Microwave Conference·2014· 1 cited
A 190-GHz amplifier with gain-boosting technique in 65-nm CMOS
2014· 11 cited
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Frequent Co-authors

Huei Wang(25), Yu-Hsuan Lin(12), Yi-Ching Wu(5), Yunshan Wang(5), Hsin-Chiang Liao(4), Jui‐Chih Kao(4), Chenwei Wu(4), Jung-Lin Lin(4), Zuo‐Min Tsai(3), Kun‐You Lin(3), Cheng-Feng Chou(3), Kuang‐Sheng Yeh(3), Yu‐Chuan Chang(2), Bo‐Yu Chen(2), Jun-Kai Wang(2), Ji-Kang Nai(2), Yu-Ting Chou(2), Ching‐Han Tsai(1), Ting-Yi Huang(1), Sofiane Aloui(1)