M. Dion

Rutgers, The State University of New Jersey — United States

Engineering · Physical Sciences

19h-index8.3kcitations80works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(52), Semiconductor Quantum Structures and Devices(51), Photonic and Optical Devices(40), Spectroscopy and Laser Applications(9), Advanced Semiconductor Detectors and Materials(7)

Publications80 total

A density functional for sparse matter
Journal of Physics Condensed Matter·2009· 545 cited
Wavelength Tuning In Active Surface-emitting Harmonic Generators For Application As Spatially Addressable Coherent Detectors
2005
Van der Waals density functional theory with applications
International Journal of Quantum Chemistry·2004· 335 cited
Van der Waals Density Functional for General Geometries
Physical Review Letters·2004· 5.5k citedOpen Access
Van der Waals Density Functional for Layered Structures
Physical Review Letters·2003· 689 citedOpen Access
Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates
Journal of Crystal Growth·2003· 16 cited
Material parameters for 2D modeling of quaternary quantum well lasers
2002
Photo-detection in a reverse biased InGaAs/InP laser structure at 1.5μm
2002
Limits of strain compensation in MQW InGaAsP/InP 1.5 μm lasers
2002· 1 cited
Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications
2002· 1 cited
A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/
2002
Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications
2002
Optimization of T/sub 0/ in GaAs/(Al,Ga)As, multiple-quantum-well GRINSCH lasers
2002
Experiment and modeling of thermal crosstalk in semiconductor laser arrays
2002· 1 cited
Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs/GaAs structure for 0.98 μm applications
2002
Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2002· 12 citedOpen Access
Photoluminescence of boron-doped Si1−xGex epilayers grown by UHV-CVD
Materials Science and Engineering B·2002· 1 cited
Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates
MRS Proceedings·2001· 5 cited
Reduced 980 nm laser facet absorption by band gap shifted extended cavities
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1998· 7 cited
Structural characterization of a UHV/CVD-grown SiGe HBT with graded base
Thin Solid Films·1998· 2 cited
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Frequent Co-authors

S. Charbonneau(13), F. Chatenoud(13), Philip J. Poole(12), R. D. Goldberg(11), I. V. Mitchell(11), Michael Davies(9), Robin L. Williams(8), M. Buchanan(8), Mahmoud Fallahi(8), Z. R. Wasilewski(7), R. Barber(7), G. C. Aers(6), I. M. Templeton(6), A. Delâge(6), David Moss(6), Yan Feng(5), Emil S. Köteles(5), D. Landheer(5), S. P. McAlister(5), Hanna A. Rydberg(4)