Shawn S. H. Hsu

ITRI International — United States

Engineering · Physical Sciences

28h-index3.0kcitations249works1.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(135), GaN-based semiconductor devices and materials(48), Semiconductor materials and devices(45), Electromagnetic Compatibility and Noise Suppression(41), Advancements in PLL and VCO Technologies(40)

Publications249 total

Experimental demonstration of radiation damage suppression in multi-gate MOS devices
Vacuum·2025
29%-Fractional Bandwidth X-Band Continuous-Mode Class-F/F <sup>−1</sup> GaN MMIC Power Amplifiers With Broadband Matching Network Design
IEEE Transactions on Microwave Theory and Techniques·2025
Hexagonal BN membranes formation by liquid-phase synthesis: Insights from scanning transmission x-ray microscopy
APL Materials·2025Open Access
A Compact Dual-Voltage LDO Regulator Design with Switching Bandgap Reference
2025
A 45.4-dB Gain $\boldsymbol{G}_{\mathrm{m}}$ - Boosting Triple Noise-Canceling LNA in 28-nm CMOS for Spin Qubit Readout
2025· 1 cited
Watt-Level X-Band Gan Schottky Diode Rectifier
2025
A $0.003-\text{mm}^{2} 42.6-\text{dB}$ Gain Ultrawideband Inductor-Less LNA in 28-nm CMOS for Quantum Computing Readout Applications
2025
A Sub-6 Ghz Ultra-Compact 69.8
2025
A Continuous-Mode Class- $\mathrm{F}^{-1} \mathrm{X}$-Band Gan Mmic Power Amplifier with a 29.7
2025· 1 cited
2DHG in AlGaN Back-Barrier for Substrate Loss Suppression and RF Performance Enhancement in GaN-on-Si HEMTs
IEEE Electron Device Letters·2025· 3 cited
Total Ionizing Doses Effects on MOSFET, FinFET, and GAAFET After Co-60 Radiation Exposure
2025
A Custom C Band High-Power GaN-Based Rectifier for WPT Systems
2025· 1 cited
Dynamic On-Resistance Degradation in E-Mode GaN HEMTs Under Over-Voltage Hard Switching Stress: Insight of Physical Space and Energy Levels
2025
Enhancing Continuous Switching Stability of $\beta$-Ga<sub>2</sub>O<sub>3</sub> SBDs Through Epitaxial Surface Condition and Edge Termination Optimizations
2025
Filamentous chemokine CCL5 structure and the functional aspects
Scientific Reports·2025· 1 citedOpen Access
Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF Applications
2025· 1 cited
A 43.4-dB Gain 7.6-mW 197.5% Bandwidth Double Noise-Canceling Cryogenic LNA Using Gain Peaking Technique for Multiple Spin Qubit Readout
IEEE Transactions on Circuits & Systems II Express Briefs·2025· 1 cited
COMPARING IMMUNOCYTOKINES LEVELS BETWEEN ALCOHOL- DEPENDENT PATIENTS WITH AND WITHOUT DELIRIUM TREMENS
The International Journal of Neuropsychopharmacology·2025Open Access
An Ultrawideband Cryogenic LNA in 40-nm CMOS for Multiple Spin/Superconducting Qubit Readout
IEEE Microwave and Wireless Technology Letters·2025
High-Power Dual-Band RF Rectifier With Multifocus GaN Techniques for WPT Applications
IEEE Transactions on Microwave Theory and Techniques·2025
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Frequent Co-authors

Jun‐De Jin(9), Yu‐Syuan Lin(8), Yi-Wei Lian(7), Ming-Hsien Tsai(6), Fu-Lung Hsueh(5), Chewn-Pu Jou(5), Chuan‐Wei Tsou(4), Sumin David Joseph(3), Yi Huang(3), Da‐Chiang Chang(3), Chih-Yuan Chan(3), C. Y. Chan(2), Chao‐Hui Yeh(2), Yu-Chiao Chiu(2), Po‐Wen Chiu(2), Sih-Han Li(2), Lung-Kai Mao(2), Jenn-Chang Hwang(2), Ting-Hao Chang(2), Chao‐Ying Hsieh(2)