Jonathan Boulanger

Harvard University — United States

Engineering · Physical Sciences

12h-index781citations29works0.02yr avg
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Research Topics

Nanowire Synthesis and Applications(16), Advancements in Semiconductor Devices and Circuit Design(8), Quantum Dots Synthesis And Properties(6), Chalcogenide Semiconductor Thin Films(6), Semiconductor Quantum Structures and Devices(4)

Publications29 total

Functional and Ultrastructural Analysis of Reafferent Mechanosensation in Larval Zebrafish
SSRN Electronic Journal·2021Open Access
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy
Journal of Crystal Growth·2017· 17 cited
ガスソース分子ビームエピタクシーにおけるV族フラックスによるGaPナノワイヤ形態の制御【Powered by NICT】
Journal of Crystal Growth·2017
Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency
Nanotechnology·2016· 27 cited
Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy
Nanotechnology·2016· 9 cited
(Invited) GaAs Quantum Dots in Gap Nanowires: Growth and Luminescence
ECS Meeting Abstracts·2016
Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate
IEEE Journal of Photovoltaics·2016· 44 cited
Nanowire dopant measurement using secondary ion mass spectrometry
Journal of Applied Physics·2015· 11 cited
Fabrication of highly ordered vertical GaAs nanowires by inductively coupled plasma etching and their modal analysis
TechConnect Briefs·2015
Multi-spectral optical absorption in substrate-free nanowire arrays
Applied Physics Letters·2014· 15 cited
Gallium loading of gold seed for high yield of patterned GaAs nanowires
Applied Physics Letters·2014· 3 cited
Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties
Nanotechnology·2014· 61 cited
Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations
Journal of Crystal Growth·2013· 12 cited
Unveiling Transient Behaviors in Heterostructure Nanowires
MacSphere (McMaster University)·2013Open Access
Cover Picture: III–V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013)
physica status solidi (RRL) - Rapid Research Letters·2013· 8 citedOpen Access
Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon
Semiconductor Science and Technology·2013· 38 cited
III–V nanowire photovoltaics: Review of design for high efficiency
physica status solidi (RRL) - Rapid Research Letters·2013· 231 citedOpen Access
Unlocking doping and compositional profiles of nanowire ensembles using SIMS
Nanotechnology·2013· 24 cited
Patterned gold-assisted growth of GaP nanowires on Si
Semiconductor Science and Technology·2012· 15 cited
Polytype formation in GaAs/GaP axial nanowire heterostructures
Journal of Crystal Growth·2011· 24 cited
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Frequent Co-authors

Ray LaPierre(18), A. C. E. Chia(9), P Kuyanov(6), Navneet Dhindsa(5), Simarjeet S. Saini(5), S. J. Gibson(3), Iman Khodadad(3), A Lafontaine(3), J. Pottier(3), Chris Haapamaki(2), R. Yee(2), Naser Tajik(2), N. Jewell(2), Kazi Moshiur Rahman(2), Brendan A. Wood(2), Martin Aagesen(2), J.P. Brethon(2), Jaspreet Walia(2), J.P. Tanguy(2), Jian‐Kang Zhang(1)