Jun Tatebayashi

Osaka University of Economics — Japan

Physics and Astronomy · Physical Sciences

28h-index2.8kcitations243works0.22yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(126), GaN-based semiconductor devices and materials(76), Semiconductor Lasers and Optical Devices(68), Photonic and Optical Devices(63), Quantum Dots Synthesis And Properties(49)

Publications243 total

Improved Laser Cooling Efficiencies of Rare-Earth-Doped Semiconductors Using a Photonic-Crystal Nanocavity
Solids·2025Open Access
Enhanced Extraction Efficiency of Erbium Luminescence in Erbium Oxygen Codoped Gallium Arsenide Using One-Dimensional Photonic Crystals
MATERIALS TRANSACTIONS·2025
Eu-doped GaN and InGaN monolithically stacked RGB LEDs for ultrahigh-resolution micro-LED displays
2025
Energy transfer up-conversion of Tm,Yb-codoped ZnO grown on ZnO nanowires by sputtering-assisted metalorganic chemical vapor deposition
Japanese Journal of Applied Physics·2025Open Access
Circularly polarized cavity mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Applied Physics Letters·2025· 1 cited
Demonstration of enhanced Er luminescence in nanobeam photonic crystal nanocavities based on Er,O-codoped GaAs
Japanese Journal of Applied Physics·2025
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
arXiv (Cornell University)·2024Open Access
Fabrication and Optical Characteristics of Photonic Crystal Nanocavities with Er,O-Codoped GaAs
Journal of the Society of Materials Science Japan·2024Open Access
An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN
AIP Advances·2024Open Access
Exploration of Nanowire Photonics Towards Advent of Super-Smart Societies
Topics in applied physics·2024· 1 cited
Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs
Optics Continuum·2023· 5 citedOpen Access
Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes
ECS Journal of Solid State Science and Technology·2023· 2 citedOpen Access
Electrically driven europium-doped GaN microdisk
Optics Letters·2023· 1 cited
Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al<sub>2</sub>O<sub>3</sub>/n-ZnO Heterostructures
ECS Journal of Solid State Science and Technology·2023Open Access
37‐4: <i>Invited Paper:</i> Towards Small, Ultrahigh‐Definition Micro‐LED Displays Using Monolithic Vertically Stacked RGB LEDs
SID Symposium Digest of Technical Papers·2023
229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide
Applied Physics Express·2023· 14 citedOpen Access
Monolithic Vertically Stacked RGB LEDs for Small Micro-LED Displays with Ultrahigh Definition
2023· 1 cited
Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy
Japanese Journal of Applied Physics·2023· 4 citedOpen Access
Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing
Applied Physics Letters·2023· 2 cited
Formation and Optical Characteristics of Tm,Yb-Codoped ZnO Nanowires Towards Improvement of Photovoltaic Conversion Efficiency Via Downconversion
Journal of the Society of Materials Science Japan·2022· 1 citedOpen Access
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Frequent Co-authors

Yasuhiko Arakawa(24), Diana L. Huffaker(23), Ganesh Balakrishnan(13), Satoshi Iwamoto(9), L. R. Dawson(8), Noppadon Nuntawong(8), Masao Nishioka(6), Yasutomo Ota(6), S. Huang(6), Tomasz J. Ochalski(6), P. S. Wong(6), Toshihiro Nakaoka(5), A. Jallipalli(5), H. Ebe(5), Mitsuru Sugawara(5), Jinfa Ho(4), Arezou Khoshakhlagh(4), Nobuaki Hatori(4), Akito Kuramata(4), Baolai Liang(4)