Yu‐Rim Jeon

The University of Texas at Austin — United States

Engineering · Physical Sciences

13h-index707citations26works10.22yr avg
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Research Topics

Advanced Memory and Neural Computing(14), Ferroelectric and Negative Capacitance Devices(10), Semiconductor materials and devices(6), Neuroscience and Neural Engineering(6), GaN-based semiconductor devices and materials(3)

Publications26 total

Enhanced Synaptic Memory Window and Linearity in Planar In<sub>2</sub>Se<sub>3</sub> Ferroelectric Junctions
Advanced Materials·2024· 18 citedOpen Access
Addressing Unmet Precision Requirements through Improved Automatic Identification of Cerebral Microbleeds
Alzheimer s & Dementia·2024Open Access
The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices
Advanced Science·2024· 10 citedOpen Access
Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System
Advanced Intelligent Systems·2024· 7 citedOpen Access
Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects
Nanoscale Horizons·2024· 16 citedOpen Access
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO<sub>2</sub> (La:HfO<sub>2</sub>) and TaN-Based Artificial Synapses
ACS Applied Materials & Interfaces·2023· 5 cited
Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In<sub>2</sub>Se<sub>3</sub>
Advanced Electronic Materials·2023· 12 citedOpen Access
Electric-field-enhanced aluminum-induced crystallization of amorphous silicon thin film using decreasing stepwise current method
Journal of Non-Crystalline Solids·2023
Room-temperature stable CsPbI3 perovskite quantum dots prepared by layer-by-layer assembly for photonic synapse
Journal of Alloys and Compounds·2023· 13 cited
Electric Field-Enhanced Aluminum Induced Crystallization of Amorphous Silicon Thin Film by Decreasing Stepwise Current Method
SSRN Electronic Journal·2023Open Access
Photo-synaptic properties of CH3NH3Pb1-xMnxBr2x+1 hybrid perovskite thin film-based artificial synapse
Ceramics International·2022· 7 cited
Atomic-Layer Deposited Tantalum-based Metal Gates (TaN, TaAlC, TaAlN, TaCoN) for Multiple VTH Modulation
2022
Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
Applied Surface Science·2022· 21 cited
Analog Synaptic Transistor with Al-Doped HfO<sub>2</sub> Ferroelectric Thin Film
ACS Applied Materials & Interfaces·2021· 97 cited
Cellulose Nanocrystal Based Bio‐Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications
Advanced Materials Technologies·2021· 73 cited
Partially Oxidized MXene Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics
Advanced Electronic Materials·2020· 84 cited
Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
Journal of Materials Science Materials in Electronics·2019· 38 cited
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
Solid-State Electronics·2018· 12 cited
Engineering synaptic characteristics of TaO<sub>x</sub>/HfO<sub>2</sub> bi-layered resistive switching device
Nanotechnology·2018· 68 cited
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device
Scientific Reports·2018· 125 citedOpen Access
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Frequent Co-authors

Changhwan Choi(16), Bon‐Cheol Ku(9), A.S. Sokolov(6), Deji Akinwande(5), Chulwon Chung(4), Dong-Hwan Lim(4), Yawar Abbas(3), Seok Ki Son(3), Hoon Hee Han(3), Jae Ho Lee(3), Sohyeon Kim(2), Duho Kim(2), Min Jae Ko(2), Hoonhee Han(2), Nicholas D. Ignacio(2), Andrey Sokolov Sergeevich(2), Chang‐Hwan Choi(2), Kyongtae Ryu(2), Seung Jae Moon(2), Tae Heun Kim(1)