S. Arulkumaran

Nanyang Technological University — Singapore

Physics and Astronomy · Physical Sciences

35h-index4.0kcitations177works2.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(151), Semiconductor materials and devices(97), Ga2O3 and related materials(70), Semiconductor Quantum Structures and Devices(27), Silicon Carbide Semiconductor Technologies(27)

Publications177 total

Improved device performance in <i>in situ</i> SiNx/AlN/GaN MIS-HEMTs with <i>ex situ</i> Al2O3 passivation at elevated temperatures
Applied Physics Letters·2025· 1 cited
Multi-channel AlN/GaN Schottky barrier diodes
Applied Physics Express·2024· 1 citedOpen Access
Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs
Applied Surface Science·2024· 3 cited
Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes
Materials Science and Engineering B·2024· 4 cited
First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
physica status solidi (a)·2024· 2 citedOpen Access
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
Microelectronics Reliability·2023· 1 cited
Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate
Materials Science and Engineering B·2021· 24 cited
Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology·2021· 15 citedOpen Access
Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering
Applied Physics Letters·2021· 17 citedOpen Access
Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate
Electronics·2020· 9 citedOpen Access
Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes
Materials Science and Engineering B·2020· 12 cited
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Micromachines·2020· 27 citedOpen Access
Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures
Applied Physics Express·2020· 3 cited
On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate
Applied Physics Express·2020· 12 cited
Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond
2020· 3 cited
Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$-particle detection
2020
Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond
physica status solidi (a)·2020· 2 cited
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
Japanese Journal of Applied Physics·2019· 9 cited
Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
Sensors·2019· 13 citedOpen Access
Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond
Applied Physics Express·2019· 11 cited
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Frequent Co-authors

Geok Ing Ng(33), Takashi Egawa(18), Hiroyasu Ishikawa(14), S. Vicknesh(13), T. Jimbo(8), Kumud Ranjan(8), Kian Siong Ang(7), Y. K. T. Maung(6), S. C. Foo(6), S. Tripathy(5), K. L. Teo(4), C. M. Manoj Kumar(4), Vivian Kaixin Lin(3), Joyce Pei Ying Tan(3), Shane Todd(3), Hong Wang(3), Binit Syamal(3), Xing Zhou(3), Mulagumoottil Jesudas Anand(3), M. Umeno(2)