Christophe Batard

Institut d'Électronique et des Technologies du numéRique — France

Engineering · Physical Sciences

10h-index362citations98works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(37), Electromagnetic Compatibility and Noise Suppression(37), Power Line Communications and Noise(28), Advanced Battery Technologies Research(12), Advancements in PLL and VCO Technologies(10)

Publications98 total

Online measurement of differential drain to source voltage for SiC MOSFETS power module
Microelectronics Reliability·2026Open Access
SiC MOSFET gate oxide degradation monitoring: a gate leakage current approach
SPIRE - Sciences Po Institutional REpository·2026
Hybrid Voltage Balancing Method Applied to 6 Series-Connected 1.2 Kv SiC MOSFETs
2025
Optimisation des temps morts d’une cellule de commutation haute-fréquence par observation de la charge de grille.
SPIRE - Sciences Po Institutional REpository·2025
Innovative gate driver structure achieving low time skew across isolation barrier for parallel connected SiC modules
2025
Innovative gate driver structure achieving low jitter across isolation barrier for parallel connected SiC modules
SPIRE - Sciences Po Institutional REpository·2025
SiC MOSFET Short-Circuit Protection: a Faster Soft Shut Down Method for Gate Drivers
SPIRE - Sciences Po Institutional REpository·2024Open Access
Voltage Balancing Method for Series-Connection of 50 SiC MOSFETs
SPIRE - Sciences Po Institutional REpository·2024
La restauration du pont de pierre de Bordeaux
Presses Universitaires de Bordeaux eBooks·2023Open Access
Système de mesure de la tension Drain-Source à l'état passant: application aux modules SiC forte tension
SPIRE - Sciences Po Institutional REpository·2023
Active Clamp Circuit for Online ON-State Voltage Measurement of High Voltage SiC MOSFETs Power Module
2023· 5 cited
Dielectric Material Significance on Common Mode Transient Immunity of a Shielded Pulse Planar Transformer
Lecture notes in electrical engineering·2023
An improved monitoring of gate leakage current on SiC Power MOSFETs using source driver topology
HAL (Le Centre pour la Communication Scientifique Directe)·2022
Pilotage et surveillance de MOSFET SiC : Intégration de fonctions intelligentes dans les gate drivers
HAL (Le Centre pour la Communication Scientifique Directe)·2022
Equivalent Circuit Model of a Pulse Planar Transformer and Endurance to Abrupt <i>dv/dt</i>
IEEE Transactions on Power Electronics·2022· 8 citedOpen Access
Méthode de mesure du courant de fuite de grille comme indicateur de vieillissement dédiée aux Gate Drivers
HAL (Le Centre pour la Communication Scientifique Directe)·2021
Alimentation communicante bidirectionnelle pour Gate-Driver
HAL (Le Centre pour la Communication Scientifique Directe)·2021
Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs
Energies·2021· 1 citedOpen Access
Cascaded Smart Gate Drivers for Modular Multilevel Converters Control: A Decentralized Voltage Balancing Algorithm
Energies·2021· 7 citedOpen Access
Realization and Energy Optimization of a Recharging Station for Electric Vehicles with Fixed Storage and Photovoltaic Panels
Advances in Science Technology and Engineering Systems Journal·2021Open Access
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Frequent Co-authors

Nicolas Ginot(41), Marc Anthony Mannah(14), Mohamed Machmoum(12), Frédéric Poitiers(6), Joe Antonios(5), Jérémie Jousse(5), Elisabeth Lemaire(5), Julien Weckbrodt(5), Anne‐Sophie Descamps(5), Stéphane Azzopardi(4), Christophe Bouguet(4), Y. Scudeller(4), Christophe Millet(3), Thanh-Long Le(3), Loreine Makki(2), Corentin Darbas(2), Jean‐François Diouris(2), Nabil Zaraneh(2), David Roszczypala(2), Frdric Poitiers(1)