M. Weyers

Ferdinand-Braun-Institut — Germany

Physics and Astronomy · Physical Sciences

53h-index13.0kcitations629works2.62yr avg
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Research Topics

GaN-based semiconductor devices and materials(339), Semiconductor Quantum Structures and Devices(257), Ga2O3 and related materials(167), Semiconductor Lasers and Optical Devices(165), Semiconductor materials and devices(125)

Publications629 total

Origin of the efficiency drop in far-UVC LEDs emitting between 218 and 238 nm
Applied Physics Letters·2025
Diode Laser Technology for Inertial Fusion Energy: Techniques for Scaling Yield and Power
2025
Surface improvement of high temperature annealed Si-doped AlGaN layers
Materials Science in Semiconductor Processing·2025
Impact of Silicon Doping on High‐Temperature Annealed AlN/Sapphire Templates
physica status solidi (a)·2025Open Access
Heterogeneously Integrated Evanescently Coupled Laser Systems on SiN Emitting in the Near-Infrared Band
2025Open Access
Hetero-integration of Diamond Nanostructures on AlGaN-based Photonic Circuits
2025
Design and Fabrication of Transfer-Printable Evanescently Coupled GaAs-Based Amplifier Coupons
2025
Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped <i>p</i> ‐AlGaN‐Layers
physica status solidi (RRL) - Rapid Research Letters·2025· 1 citedOpen Access
Multiquantum well design and carrier transport of AlGaN-based far-UVC LEDs with emission wavelengths between 225 nm and 233 nm
2025
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
npj Nanophotonics·2025· 9 citedOpen Access
Surface Improvement of High Temperature Annealed Si-Doped Algan Layers
SSRN Electronic Journal·2025Open Access
GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers
APL Photonics·2024· 8 citedOpen Access
Spatial correlation of defect-selective etching and dark luminescence spots in Al <sub>x</sub> Ga<sub>1−x </sub>N
Semiconductor Science and Technology·2024Open Access
226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW
physica status solidi (RRL) - Rapid Research Letters·2024· 9 citedOpen Access
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
Research Square (Research Square)·2024· 1 citedOpen Access
Telecom‐Band Spontaneous Parametric Down‐Conversion in AlGaAs‐on‐Insulator Waveguides
Laser & Photonics Review·2024· 14 citedOpen Access
Prospects of far-UVC LED technology
2024
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
physica status solidi (RRL) - Rapid Research Letters·2024· 8 citedOpen Access
Spatially resolved effects in UV LEDs with relevance for device performance and reliability
2024
Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates
Applied Physics Letters·2024· 10 citedOpen Access
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Frequent Co-authors

Michael Kneissl(25), A. Knauer(19), Tim Wernicke(16), S. Einfeldt(12), Frank Mehnke(10), Martin Guttmann(9), Christian Kühn(9), V. Kueller(8), Jens Raß(8), Tim Kolbe(7), Neysha Lobo‐Ploch(7), U. Zeimer(7), Johannes Glaab(6), Christoph Reich(6), P. Balk(6), Mickael Lapeyrade(6), Sylvia Hagedorn(5), Luca Sulmoni(5), M. Zorn(5), Frank Brunner(5)