Alberto Tosato

Delft University of Technology — Netherlands

Physics and Astronomy · Physical Sciences

9h-index404citations23works1.42yr avg
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Research Topics

Quantum and electron transport phenomena(16), Semiconductor Quantum Structures and Devices(10), Advancements in Semiconductor Devices and Circuit Design(10), Semiconductor materials and devices(5), Topological Materials and Phenomena(3)

Publications23 total

A crossbar chip for benchmarking semiconductor spin qubits
Nature Electronics·2026
Using Landau quantization to probe disorder in semiconductor heterostructures
Applied Physics Letters·2026Open Access
Persistent Instability in LLM’s Personality Measurements: Effects of Scale, Reasoning, and Conversation History
Underline Science Inc.·2026Open Access
Using Landau quantization to probe disorder in semiconductor heterostructures
arXiv (Cornell University)·2025Open Access
Exploiting strained epitaxial germanium for scaling low-noise spin qubits at the micrometre scale
Nature Materials·2025· 9 citedOpen Access
Buried unstrained germanium channels: a lattice-matched platform for quantum technology
arXiv (Cornell University)·2025Open Access
QARPET: A Crossbar Chip for Benchmarking Semiconductor Spin Qubits
arXiv (Cornell University)·2025Open Access
Cryo-CMOS Bias-Voltage Generation and Demultiplexing at mK Temperatures for Large-Scale Arrays of Quantum Devices
IEEE Transactions on Quantum Engineering·2025· 2 citedOpen Access
Vertical gate-defined double quantum dot in a strained germanium double quantum well
Physical Review Applied·2023· 8 cited
Germanium wafers for strained quantum wells with low disorder
Applied Physics Letters·2023· 38 citedOpen Access
A vertical gate-defined double quantum dot in a strained germanium double quantum well
Zenodo (CERN European Organization for Nuclear Research)·2023Open Access
A vertical gate-defined double quantum dot in a strained germanium double quantum well
Zenodo (CERN European Organization for Nuclear Research)·2023Open Access
A vertical gate-defined double quantum dot in a strained germanium double quantum well
arXiv (Cornell University)·2023Open Access
Germanium wafers for strained quantum wells with low disorder
arXiv (Cornell University)·2023· 5 citedOpen Access
Hard superconducting gap in germanium
Communications Materials·2023· 51 citedOpen Access
Hard superconducting gap in germanium
arXiv (Cornell University)·2022· 1 citedOpen Access
Front Cover: A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well (Adv. Quantum Technol. 5/2022)
Advanced Quantum Technologies·2022
A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well
Advanced Quantum Technologies·2022· 9 citedOpen Access
Lightly strained germanium quantum wells with hole mobility exceeding one million
Applied Physics Letters·2022· 44 citedOpen Access
Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells
Physical Review Letters·2020· 15 citedOpen Access
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Frequent Co-authors

Giordano Scappucci(19), Menno Veldhorst(16), Amir Sammak(14), Lucas E. A. Stehouwer(12), Davide Costa(8), Mario Lodari(7), Davide Degli Esposti(7), Corentin Déprez(6), Asser Elsayed(5), Hanifa Tidjani(4), Brian Paquelet Wuetz(3), Michele Virgilio(3), Francesco Borsoi(3), A. R. Hamilton(3), Stefan D. Oosterhout(3), Alexander Ivlev(3), Diego Sabbagh(2), Nico W. Hendrickx(2), Giovanni Capellini(2), Vukan Levajac(2)