A. V. Lobintsov

Polyus Research Institute of M.F.Stelmakh (Russia) — Russia

Engineering · Physical Sciences

6h-index102citations29works1.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(19), Laser Design and Applications(14), Photonic and Optical Devices(13), Semiconductor Quantum Structures and Devices(11), Spectroscopy and Laser Applications(9)

Publications28 total

InGaAs/AlInAs/InP Quantum-Cascade Lasers with Reflective and Antireflective Optical Coatings
Bulletin of the Lebedev Physics Institute·2024· 1 cited
Influence of anti-reflection and partial-high-reflection coatings on characteristics of quantum cascade lasers in 4-5μm range
2024· 1 cited
Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers
Bulletin of the Lebedev Physics Institute·2023
Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers
Bulletin of the Lebedev Physics Institute·2023
Semiconductor Lasers with Improved Lasing Characteristics
Bulletin of the Lebedev Physics Institute·2023
Analysis and application of multilayer mirror coatings for quantum cascade lasers in the spectral range of 4-9μm
2022 International Conference Laser Optics (ICLO)·2022
Triple integrated laser – thyristor
Quantum Electronics·2020· 3 cited
Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K
Quantum Electronics·2020· 5 cited
The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Quantum Electronics·2020· 3 cited
Double integrated laser-thyristor
Quantum Electronics·2019· 6 cited
AlGaInAs/InP semiconductor lasers with an increased electron barrier
Quantum Electronics·2019· 3 cited
Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
Quantum Electronics·2018· 5 cited
GaInAs/AlInAs Heteropair Quantum Cascade Laser Operating at a Wavelength of 5.6 μm and Temperature of Above 300K
KnE Engineering·2018· 1 citedOpen Access
A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm
Quantum Electronics·2018· 5 cited
Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser
Inorganic Materials·2017
Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Quantum Electronics·2017· 8 cited
Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
Quantum Electronics·2017· 9 cited
ПОЛУЧЕНИЕ НАНОРАЗМЕРНЫХ ГЕТЕРОСТРУКТУР GAAS/ALGAAS МЕТОДОМ МОС-ГИДРИДНОЙ ЭПИТАКСИИ ДЛЯ КВАНТОВОГО КАСКАДНОГО ЛАЗЕРА
Неорганические материалы·2017
Analysis of reliability of semiconductor emitters with different designs of cavities
Technical Physics·2016
High-power 808 nm laser bars (5mm) with wall-plug efficiency more than 67%
2016
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Frequent Co-authors

М. А. Ладугин(19), А. А. Маrmalyuk(19), S M Sapozhnikov(13), А. А. Падалица(12), Т. А. Багаев(11), В. А. Симаков(11), А. И. Данилов(9), I. I. Zasavitskiǐ(8), S. O. Slipchenko(7), N. A. Pikhtin(7), K. Yu. Telegin(7), Yu.V. Kurnyavko(7), P V Gorlachuk(7), A. Yu. Andreev(6), А. В. Иванов(6), V P Konyaev(5), V D Kurnosov(5), K V Kurnosov(5), V I Romantsevich(5), R. V. Chernov(4)