Donglai Zhong

Stanford University — United States

Engineering · Physical Sciences

29h-index5.8kcitations72works18.92yr avg
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Research Topics

Advanced Sensor and Energy Harvesting Materials(28), Carbon Nanotubes in Composites(18), Conducting polymers and applications(14), Advancements in Semiconductor Devices and Circuit Design(13), Graphene research and applications(12)

Publications72 total

Wireless soft implantable pressure sensors based on liquid metal with large-area mapping and adaptive implantation capabilities
Proceedings of the National Academy of Sciences·2026Open Access
A monolithic fabrication platform for intrinsically stretchable polymer transistors and complementary circuits
arXiv (Cornell University)·2026Open Access
A monolithic fabrication platform for intrinsically stretchable polymer transistors and complementary circuits
ArXiv.org·2026Open Access
Channel-last gate-all-around nanosheet oxide semiconductor transistors
ArXiv.org·2025Open Access
Channel-last gate-all-around nanosheet oxide semiconductor transistors
arXiv (Cornell University)·2025Open Access
Quantum-Well Carrier Confinement Overcomes Mobility–V <sub>T</sub> Trade-off of Oxide Semiconductor Transistors
2025
A simplified wearable device powered by a generative EMG network for hand-gesture recognition and gait prediction
Nature Sensors·2025· 2 cited
Intrinsically stretchable transistors and integrated circuits
Nature Reviews Electrical Engineering·2025· 1 cited
Multi- <i>V</i> <sub>T</sub> in Oxide--Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory
IEEE Transactions on Electron Devices·2025
Skin-like drift-free biosensors with stretchable diode-connected organic field-effect transistors
Nature Electronics·2025· 5 cited
High-density soft bioelectronic fibres for multimodal sensing and stimulation
Nature·2025· 18 cited
Orthogonal $\mathbf{V}_{\mathbf{T}}$ Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering
2025· 3 cited
$1000 \times$ Lower Leakage in High-Performance Carbon Nanotube Nanosheet Fets
2025
Enhancement-Mode Atomic Layer Deposited W-Doped In<sub>2</sub>O<sub>3</sub> Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability
2024· 4 cited
Skin-Inspired Sensors and Integrated Circuits for Wearables and Implantables (Invited)
2024
ISO-Performance N-Type and P-Type MOSFETs on Densely Aligned CNT Array Enabled by Self-Aligned Extension Doping with Barrier Booster
2024· 3 cited
Design Considerations and Fabrication Protocols of High-Performance Intrinsically Stretchable Transistors and Integrated Circuits
ACS Nano·2024· 14 citedOpen Access
Enabling High Performance and Strain Insensitivity in Intrinsically Stretchable Large-Area Carbon-Nanotube Thin-Film Transistors
2024· 1 cited
Author Correction: High-speed and large-scale intrinsically stretchable integrated circuits
Nature·2024· 4 citedOpen Access
Strain-Induced Performance Variation in Stretchable Carbon-Nanotube Thin-Film Transistors and the Solution Through a Circular Channel Design
IEEE Transactions on Electron Devices·2024· 8 cited
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Frequent Co-authors

Zhiyong Zhang(24), Lian‐Mao Peng(22), Zhenan Bao(22), Jeffrey B.‐H. Tok(18), Weichen Wang(14), Yuanwen Jiang(14), Jian‐Cheng Lai(12), Yu Zheng(11), Chien‐Chung Shih(8), Jie Han(8), Mengmeng Xiao(7), Zhitao Zhang(7), Huaxin Gong(7), Simiao Niu(7), Yixuan Wang(7), Chuanzhen Zhao(7), Chengyi Xu(7), Xiaozhou Ji(7), Yuya Nishio(7), Yilei Wu(7)