B. Gayral

Physics and Astronomy · Physical Sciences

36h-index5.2kcitations162works0.72yr avg
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Research Topics

GaN-based semiconductor devices and materials(93), Semiconductor Quantum Structures and Devices(60), Photonic and Optical Devices(51), Ga2O3 and related materials(37), ZnO doping and properties(32)

Publications162 total

LEDs for lighting : technological promise and rebound effects
SPIRE - Sciences Po Institutional REpository·2026
LEDs for lighting, rebound effects, and the technological promise
SPIRE - Sciences Po Institutional REpository·2025Open Access
Wurtzite vs zinc blende phase selection in GaN nanowires
Journal of Applied Physics·2025· 1 citedOpen Access
Optical properties of basal plane stacking faults in AlN nanowires
Journal of Applied Physics·2025· 1 citedOpen Access
Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type
Applied Physics Letters·2025· 2 cited
Exploring carrier diffusion in varying thickness InGaN/GaN quantum wells
2024
Comprehensive Electro-Optical Investigation of a Ga-Doped AlN Nanowire LED for Applications in the UV-C Range
ACS Applied Nano Materials·2023· 3 citedOpen Access
Optical properties of Ga-doped AlN nanowires
Applied Physics Letters·2023· 8 citedOpen Access
Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy
Journal of Applied Physics·2022· 3 citedOpen Access
Toward Crack-Free Core–Shell GaN/AlGaN Quantum Wells
Crystal Growth & Design·2021· 12 citedOpen Access
Quasi-strain-free GaN on van der Waals substrates: the case of graphene and muscovite mica
2021
Dual‐Color Emission from Monolithic <i>m</i>‐Plane Core–Shell InGaN/GaN Quantum Wells
Advanced Photonics Research·2021· 8 citedOpen Access
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy
Nanotechnology·2020· 7 citedOpen Access
UV Emission from GaN Wires with <i>m</i>-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
ACS Applied Materials & Interfaces·2020· 20 citedOpen Access
Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots
ACS Applied Materials & Interfaces·2020· 41 citedOpen Access
Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
Optics Letters·2020· 21 citedOpen Access
Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters
Nano Letters·2019· 3 citedOpen Access
Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy
Nanotechnology·2019· 8 citedOpen Access
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
Applied Physics Letters·2019· 13 citedOpen Access
Towards III-nitride on silicon active photonic circuits
Frontiers in Optics + Laser Science APS/DLS·2019
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Frequent Co-authors

B. Daudin(15), Jean‐Michel Gérard(11), Catherine Bougerol(9), Julien Renard(8), Christelle Brimont(7), T. Guillet(7), X. Checoury(7), P. Boucaud(7), G. Tourbot(6), F. Sèmond(6), E. Monroy(6), Le Si Dang(5), M. den Hertog(5), Diane Sam-Giao(5), I. Roland(5), M. Mexis(5), Evelyn L. Hu(4), P. M. Petroff(4), P. Gilet(4), Mathieu Kociak(4)