R. W. Epworth

Harlow College — United Kingdom

Engineering · Physical Sciences

14h-index1.3kcitations31works0.02yr avg
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Research Topics

Semiconductor materials and devices(9), Advancements in Semiconductor Devices and Circuit Design(8), Semiconductor Quantum Structures and Devices(6), Photonic and Optical Devices(6), Semiconductor Lasers and Optical Devices(5)

Publications31 total

An Original Low-Loss and Pass-Band Flattened Si0/sub 2/ on Si Planar Wavelength Demultiplexer
2005· 28 cited
Free standing silicon microstructures for soft x-ray masks and cold atom focusing
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1990· 12 cited
High resolution germanium zone plates and apertures for soft x-ray focalometry
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1990· 28 cited
High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistors
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1989· 11 cited
1/<i>f</i> noise of indium near the melting transition
Journal of Applied Physics·1989· 35 cited
An optical-fibre multiport detector with phase diversity
Cambridge University Engineering Department Publications Database·1988
An associative memory based on an electronic neural network architecture
IEEE Transactions on Electron Devices·1987· 47 cited
Dynamics of microfabricated electronic neural networks
Applied Physics Letters·1987· 15 citedOpen Access
Fabrication of Encapsulated Indium Films for Melting Experiments
MRS Proceedings·1986
Single electron switching events in nanometer-scale Si MOSFET's
IEEE Transactions on Electron Devices·1985· 50 cited
Observing One Interface Trap: Lattice Versus Electron Temperature
1985· 6 cited
Beam energy effects in electron beam lithography: The range and intensity of backscattered exposure
Applied Physics Letters·1984· 42 cited
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>?) Noise
Physical Review Letters·1984· 705 cited
Submicron, vacuum ultraviolet contact lithography with an F2 excimer laser
Applied Physics Letters·1984· 51 cited
High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier
1984· 1 cited
Contact lithography at 157 nm with an F2 excimer laser
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1983· 30 cited
Buried channel MOSFET's with gate lengths from 2.5 µm to 700 Å
IEEE Electron Device Letters·1982· 7 cited
Performance of a seven-segment iridium oxide electrochromic display
Journal of Applied Physics·1982· 3 cited
Preliminary observation of 1-D effects in narrow Si MOSFET structures
Physica B+C·1982
700 &amp;amp;#197; Gate length buried channel Silicon MOSFET's
1982· 1 cited
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Frequent Co-authors

L. D. Jackel(19), Richard Howard(12), D. M. Tennant(12), Linus A. Fetter(6), W. J. Skocpol(5), Evelyn L. Hu(5), R. E. Behringer(4), H. G. Craighead(3), P. Grabbe(3), K. S. Ralls(2), R. E. Howard(2), J. C. White(2), J. E. Sweeney(2), P. M. Mankiewich(2), Daniel Schwartz(2), J. S. Denker(2), Hans Peter Graf(2), B. Straughn(2), D. M. Tennant(2), John H. Scofield(2)