Mark E. Mason

Princeton University — United States

Engineering · Physical Sciences

7h-index263citations45works0.02yr avg
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Research Topics

Advancements in Photolithography Techniques(24), Integrated Circuits and Semiconductor Failure Analysis(14), Advanced Surface Polishing Techniques(7), Electron and X-Ray Spectroscopy Techniques(5), Plasma Diagnostics and Applications(4)

Publications45 total

Programmable material via thiol-ene polymerization initiated by electric-field induced thiyl radical on piezoelectric ZnO
Nature Communications·2025Open Access
Electric-Field-Controlled Chemical Reaction via Piezo-Chemistry Creates Programmable Material Stiffness
arXiv (Cornell University)·2025Open Access
American Multinationals and Japan: The Political Economy of Japanese Capital Controls, 1899-1980
The SHAFR Guide Online·2017· 2 cited
Design enablement: The challenge of being early, accurate, and complete
2012· 6 cited
Design for Manufacturability through Design-Process Integration VII
2012
Complications
Journal of Oral and Maxillofacial Surgery·2009
Front Matter: 6925
2008Open Access
Context analysis and validation of lithography induced systematic variations in 65nm designs
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 2 cited
Rules based process window OPC
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 2 cited
DFM EDA Technology: A Lithographic Perspective
2007· 12 cited
Characterization of structure and morphology of an advanced p-channel field effect transistor under uniaxial stress by synchrotron x-ray diffraction
Applied Physics Letters·2007· 14 cited
Process window and interlayer aware OPC for the 32-nm node
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 6 cited
Finding the needle in the haystack: using full-chip process window analysis to qualify competing SRAF placement strategies for 65 nm
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006
Automotive electronics can fail because of particles from outer space
2006
Improving asymmetric printing and low margin using custom illumination for contact hole lithography
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006
Challenges and solutions for trench lithography beyond 65nm node
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 2 cited
Mask design rules (45nm): time for standardization
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 3 cited
Improved Monolithic Vacuum Field Emission Diodes
2005
65nm node gate pattern using attenuated phase shift mask with off-axis illumination and sub-resolution assist features
Optical Microlithography XVIII·2005· 9 cited
Design rule considerations for 65-nm node contact using off axis illumination
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 1 cited
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Frequent Co-authors

Robert A. Soper(9), Mark A. Terry(8), Sean O'Brien(5), John N. Randall(5), Keeho Kim(4), Amitava Chatterjee(3), Soumya Shubhra Nag(3), D. Rogers(3), K. Joyner(3), Doug Mercer(3), Gary Zhang(3), Tom Aton(3), Shane Best(3), M.H. Weichold(3), James D. Legg(3), Sean C. O’Brien(3), H. J. Ziock(2), K. Holzscheiter(2), A.N. Morgan(2), A. P. T. Palounek(2)