M.A. Hollis

University of Oregon — United States

Engineering · Physical Sciences

17h-index3.2kcitations77works0.32yr avg
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Research Topics

Semiconductor materials and devices(23), Semiconductor Lasers and Optical Devices(15), Semiconductor Quantum Structures and Devices(13), GaN-based semiconductor devices and materials(11), Photonic and Optical Devices(11)

Publications77 total

Investigation of Dipole-Stabilized Skyrmions in Amorphous Centrosymmetric FeGdPt Multilayers using 4D-STEM
Microscopy and Microanalysis·2025Open Access
Low‐Temperature Processing to Obtain Contact Resistance of <0.03 Ohm mm to Boron‐Doped Diamond
physica status solidi (a)·2024· 1 citedOpen Access
AB1436 TO WHAT EXTENT IS THERE A HALO EFFECT ON CLASS PRESCRIBING ACROSS KEY RHEUMATOLOGY INDICATIONS (RA, PsA AND axSpa)?
Annals of the Rheumatic Diseases·2024
Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors
Applied Physics Letters·2024Open Access
GaN hot electron transistors: From ballistic to coherent
Solid-State Electronics·2023· 1 cited
III-nitride vertical hot electron transistor with polarization doping and collimated injection
Applied Physics Letters·2022· 5 cited
Analysis of the dependence of critical electric field on semiconductor bandgap
Journal of materials research/Pratt's guide to venture capital sources·2022· 73 citedOpen Access
Controlling the carrier density of surface conductive diamond
Diamond and Related Materials·2021· 10 cited
Hydrogen and deuterium termination of diamond for low surface resistance and surface step control
Diamond and Related Materials·2021· 8 cited
Ultra-Wide Bandgap Semiconductors Workshop III
2021
Dependence of Critical Electric Field on Semiconductor Bandgap - An Analytical Study.
2020· 1 citedOpen Access
Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film
Diamond and Related Materials·2020· 18 cited
(Invited) A New Analysis of the Dependence of Critical Electric Field on Semiconductor Bandgap
ECS Meeting Abstracts·2019· 4 cited
ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices
2019· 1 citedOpen Access
Acoustoelectric amplification of Rayleigh waves in low sheet density AlGaN/GaN heterostructures on sapphire
Applied Physics Letters·2019· 34 cited
Progress Toward Diamond Power Field‐Effect Transistors
physica status solidi (a)·2018· 91 citedOpen Access
Progress Toward Diamond Power Field‐Effect Transistors (Phys. Status Solidi A 22∕2018)
physica status solidi (a)·2018· 1 citedOpen Access
Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018
2018· 8 citedOpen Access
Chemical and semiconducting properties of NO2-activated H-terminated diamond
Diamond and Related Materials·2018· 28 cited
Ultrawide-Bandgap Semiconductors: Introduction and Key Parameters.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2018Open Access
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Frequent Co-authors

C. O. Bozler(14), R.A. Murphy(9), K. B. Nichols(9), D.D. Rathman(7), M. W. Geis(7), S. Rabe(6), Joseph O. Varghese(6), Robert Kaplar(5), R.H. Mathews(5), R. J. Nemanich(4), C.T. Harris(4), C.H. Wuorio(4), Steven A. Vitale(4), Jack Flicker(4), L.F. Eastman(4), T.A. Grotjohn(3), F. W. Smith(3), A. R. Calawa(3), D. R. Dykaar(3), Jagannath B. Lamture(3)