Luca Redaelli

Physics and Astronomy · Physical Sciences

9h-index178citations17works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(11), Semiconductor Quantum Structures and Devices(6), Photonic and Optical Devices(5), Advanced Fiber Laser Technologies(4), Nanowire Synthesis and Applications(4)

Publications17 total

Field-resolved measurements of soliton self-compressed single-cycle pulses and their application to water-window high-harmonic generation
Optica·2025Open Access
Specificity and ideas. Urban scenography of a multipurpose architecture
2019
Advanced Superconducting Nanowire Single Photon Detectors for Photonic Quantum Technologies
2018Open Access
Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
Optics Express·2018· 19 citedOpen Access
Advanced Superconducting Nanowire Single Photon Detectors for Photonic Quantum Technologies
HAL (Le Centre pour la Communication Scientifique Directe)·2018
High absorption efficiency and polarization-insensitivity in superconducting-nanowire single-photon detectors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017
P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
Solar Energy Materials and Solar Cells·2016· 18 cited
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
arXiv (Cornell University)·2016· 1 citedOpen Access
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
Applied Physics Letters·2016· 27 cited
Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
Japanese Journal of Applied Physics·2015· 21 cited
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes
Applied Physics Letters·2014· 14 cited
Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy
Nanotechnology·2014· 40 cited
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
DepositOnce·2013Open Access
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
Journal of Applied Physics·2013· 9 cited
Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing
IEEE Photonics Technology Letters·2013· 17 cited
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
2013
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 12 cited

Frequent Co-authors

E. Monroy(9), Anna Mukhtarova(7), S. Einfeldt(5), Michael Kneissl(5), Akhil Ajay(4), S. Valdueza‐Felip(4), Val Zwiller(4), Jean‐Michel Gérard(4), H. Machhadani(3), H. Wenzel(3), Christophe Durand(2), J. Eymery(2), M. P. Chauvat(2), P. Ruterana(2), Thibault Cremel(2), M. Jiménez-Rodríguez(2), K. Kheng(2), Martin Martens(2), G. Tränkle(2), S. Valdueza-Felip(1)