Tokyo Institute of Technology — Japan
Materials Science · Physical Sciences
5h-index67citations11works0.02yr avg
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Research Topics
ZnO doping and properties(4), Semiconductor materials and interfaces(4), Inorganic Fluorides and Related Compounds(4), GaN-based semiconductor devices and materials(3), Ga2O3 and related materials(3)
Publications11 total
Japanese Journal of Applied Physics·1992· 3 cited
Applied Surface Science·1992· 6 cited
Electrical properties of rare-earth mixed-fluorides (Y x La 1-x F 3 )/GaAs structures.
応用物理学関係連合講演会講演予稿集·1992
Medical Entomology and Zoology·1992
GaAs(111)基板上にエピタキシャル成長させた六方晶LaF 3 の格子定数の斜方晶YF 3 の混入による制御
1992
Solid-State Electronics·1991· 5 cited
Japanese Journal of Applied Physics·1990· 12 cited
Journal of Applied Physics·1987· 13 cited
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1987· 12 cited
Surface Science·1986· 15 cited
Frequent Co-authors
Hiroshi Ishiwara(6), A.S. Barrière(4), G. Couturier(4), Kouji Aizawa(3), A. Chaouki(2), G. Gevers(1), J. Grannec(1), C. Sribi(1), Choon Yian Haw(1), Kwang Ho Kim(1), A. Thabti(1), K. H. Kim(1), Kazuhiro Aizawa(1), 会沢康治(1), 神田和重(1), 石原宏(1), Koki Aizawa(1)