Yuhua Xiong

Kunming University of Science and Technology — China

Engineering · Physical Sciences

16h-index660citations48works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Ferroelectric and Negative Capacitance Devices(14), Advancements in Semiconductor Devices and Circuit Design(9), Electronic and Structural Properties of Oxides(9), Integrated Circuits and Semiconductor Failure Analysis(8)

Publications48 total

Service Behavior of Ceramic/Metal interface in Ni-base Composite Coatings produced by HVOF
SSRN Electronic Journal·2025Open Access
Oxidation behavior of Al2O3-dispersion-strengthened MCrAlY bond coat at 1100°C
SSRN Electronic Journal·2025Open Access
Influence of Barrier Layers on ZrCoCe Getter Film Performance
Materials·2023· 1 citedOpen Access
Lightweight PPy aerogel adopted with Co and SiO2 nanoparticles for enhanced electromagnetic wave absorption
Journal of Material Science and Technology·2021· 62 cited
Prestack Inversion Based on Bayesian Theory in Ray Parameter Domain and tts Application in Hydrocarbon Detection
2021
Application of Optimization Matching Pursuit Base on Particle Swarm to Complex Reservoir of Bohai Bay Basin
2020
X-ray structure of the S. typhimurium YrlA effector-binding module
2018
Improving interfacial and electrical properties of HfO <sub>2</sub> /SiO <sub>2</sub> /p‐Si stacks with N <sub>2</sub> ‐plasma‐treated SiO <sub>2</sub> interfacial layer
Rare Metals·2017· 8 cited
Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET
Nanoscale Research Letters·2016· 4 citedOpen Access
Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO<sub><i>x</i></sub>/Al<sub>2</sub>O<sub>3</sub>gate dielectrics
Journal of Physics D Applied Physics·2016· 14 cited
Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs
Journal of Electronic Materials·2016· 9 cited
Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation
Applied Surface Science·2015· 22 cited
High mechanical endurance RRAM based on amorphous gadolinium oxide for flexible nonvolatile memory application
Journal of Physics D Applied Physics·2015· 19 cited
Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Solid Electrolyte Thin Film
IEEE Journal of the Electron Devices Society·2015· 8 citedOpen Access
Energy band alignment of HfO <sub>2</sub> on p‐type (100)InP
Rare Metals·2014· 7 cited
Formation of the dopant-oxygen vacancy complexes and its influence on the photoluminescence emissions in Gd-doped HfO2
Journal of Applied Physics·2014· 21 cited
Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO<sub>2</sub> gate dielectric films
physica status solidi (b)·2014· 7 cited
Computational investigation of the phase stability and the electronic properties for Gd-doped HfO<sub>2</sub>
Applied Physics Letters·2014· 28 citedOpen Access
The Theoretical Analysis and Design of Coding BOTDR System With APD Detector
IEEE Sensors Journal·2014· 16 cited
Resistive switching characteristics of Dy <sub>2</sub> O <sub>3</sub> film with a Pt nanocrystal embedding layer formed by pulsed laser deposition
Rare Metals·2013· 10 cited
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Frequent Co-authors

Jun Du(19), Hailing Tu(17), Hongbin Zhao(15), Feng Wei(15), Xinqiang Zhang(10), Wenwu Wang(10), Mengmeng Yang(9), Jun Du(5), Lin Liu(4), Aimin Yang(4), Dapeng Chen(4), Jing Zhang(4), Jinshan Li(3), Lei Wang(3), Xiaolei Wang(3), Jun Du(3), Xiaona Wang(3), Xiaoqiang Chen(3), Xiuying Wei(3), Mei Ji(2)