J. Nürnberger

University of Würzburg — Germany

Physics and Astronomy · Physical Sciences

14h-index746citations49works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(38), Chalcogenide Semiconductor Thin Films(15), Quantum Dots Synthesis And Properties(13), Advanced Semiconductor Detectors and Materials(10), Quantum and electron transport phenomena(9)

Publications49 total

The doping problem in II-VI-compounds and its consequences for wide gap II-VI devices
2005
Transient polarization state of four-wave-mixing signals: identification of higher-order correlations
2003
First order single mode DBR laser diodes emitting in the blue-green spectral range
2002· 1 cited
Optical method for the determination of carrier density in modulation-doped quantum wells
Physical review. B, Condensed matter·2002· 73 citedOpen Access
Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2001· 3 cited
Exciton-trion coupling in modulation doped quantum well structures
Springer proceedings in physics·2001
Optical characterization of relaxation processes in nitrogen-doped ZnSe layers
Applied Physics Letters·2000· 1 cited
Oscillator strength of trion states in ZnSe-based quantum wells
Physical review. B, Condensed matter·2000· 78 cited
Green II–VI light emitting diodes with long lifetime on InP substrate
Applied Physics Letters·2000· 53 cited
Intensity dependence of signals obtained in four-wave-mixing geometry: influence of higher-order contributions
Journal of Crystal Growth·2000· 9 cited
Ab initio energy calculation of nitrogen-related defects in ZnSe
Journal of Crystal Growth·2000· 5 cited
Magneto-optics of charged excitons in ZnSe/ZnMgSSe quantum wells
Journal of Crystal Growth·2000· 9 cited
Line shape of four-wave-mixing signals: dependence on sample geometry and excitation conditions
Journal of Crystal Growth·2000· 7 cited
The electronic band structure of ZnSe(100)
Surface Science·2000· 13 cited
Charged Exciton Dynamics in ZnSe/ZnMgSSe QWs
physica status solidi (a)·2000· 16 cited
Oscillator strength of excitons and charged excitons in ZnSe/ZnMgSSe QWs with a 2DEG of low density
Physica E Low-dimensional Systems and Nanostructures·2000· 2 cited
Combined Exciton-Electron Processes in Modulation Doped Quantum Well Structures
2000· 2 cited
Stability of nitrogen in ZnSe and its role in the degradation of ZnSe lasers
Physical review. B, Condensed matter·1999· 36 cited
Charged excitons in ZnSe-based quantum wells
Physical review. B, Condensed matter·1999· 85 cited
In situ lateral structuring during II–VI MBE growth with Al50Ga50As–GaAs shadow masks
Journal of Crystal Growth·1999· 7 cited
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Frequent Co-authors

W. Faschinger(36), G. Landwehr(21), W. Ossau(12), D. Hommel(11), G. V. Astakhov(9), D. R. Yakovlev(9), В. П. Кочерешко(9), K. Schüll(9), D. Albert(8), M. Ehinger(8), G. Bacher(8), A. Forchel(8), G. Landwehr(7), E. Kurtz(6), Maria das Graças Andrade Korn(6), V. Hock(5), B. Jobst(5), Björn Haase(5), U. Neukirch(5), G. Bartels(5)