L. Perniola

Commissariat à l'Énergie Atomique et aux Énergies Alternatives — France

Engineering · Physical Sciences

35h-index4.7kcitations225works0.02yr avg
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Research Topics

Advanced Memory and Neural Computing(145), Semiconductor materials and devices(109), Ferroelectric and Negative Capacitance Devices(79), Phase-change materials and chalcogenides(59), Advancements in Semiconductor Devices and Circuit Design(36)

Publications225 total

Memory Challenges
Springer handbooks·2022· 1 cited
A Current Attenuator for Efficient Memristive Crossbars Read-Out
2019· 4 cited
Performance Improvement on HfO<sub>2</sub>-Based 1T Ferroelectric NVM by Electrical Preconditioning
2019· 3 cited
Emerging memory technologies for neuromorphic hardware
Elsevier eBooks·2019· 2 cited
Characterization of HfO 2 -based devices with indication of second order memristor effects
Microelectronic Engineering·2018· 21 citedOpen Access
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·2018· 76 citedOpen Access
Improvement of HfO&lt;inf&gt;2&lt;/inf&gt; based RRAM array performances by local Si implantation
2017· 10 cited
Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays
IEEE Electron Device Letters·2017· 13 citedOpen Access
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
HAL (Le Centre pour la Communication Scientifique Directe)·2017
Bulk-based DC offset calibration for low-power memristor array read-out system
2017
Programming Current Reduction in GeS&lt;sub&gt;2&lt;/sub&gt;+Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; Based Phase-Change Memory
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
IEEE Transactions on Electron Devices·2017· 14 cited
OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017
(Invited) Non Volatile Resistive and Magnetic Memories:  Materials, Integration Challenges and Opportunities
ECS Meeting Abstracts·2017
Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting
Frontiers in Neuroscience·2017· 1 citedOpen Access
Innovative GeS&lt;inf&gt;2&lt;/inf&gt;/Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;3&lt;/inf&gt; based phase change memory for low power applications
2017· 1 cited
Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory
Journal of Applied Physics·2017· 9 cited
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis
Microelectronics Reliability·2017· 9 cited
Phase Change and Magnetic Memories for Solid-State Drive Applications
Proceedings of the IEEE·2017· 37 citedOpen Access
Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance
2017· 35 cited
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Frequent Co-authors

B. De Salvo(25), Elisa Vianello(18), G. Molas(12), G. Ghibaudo(10), A. Toffoli(10), A. Roule(10), C. Cagli(9), S. Maı̂trejean(9), G. Reimbold(9), V. Sousa(9), J. F. Nodin(9), P. Blaise(9), G. Navarro(8), R. Annunziata(7), M. Bernard(7), A. Persico(7), H. Grampeix(7), O. Cueto(6), B. DeSalvo(6), Daniele Garbin(6)