Vladimir N. Shumsky

Russian Academy of Sciences — Russia

Engineering · Physical Sciences

7h-index176citations48works0.02yr avg
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Research Topics

Advanced Semiconductor Detectors and Materials(29), Semiconductor Quantum Structures and Devices(25), Advanced Thermoelectric Materials and Devices(11), Phase-change materials and chalcogenides(10), Photonic and Optical Devices(6)

Publications48 total

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity
Semiconductors·2016
Three-spectrum multielement photodetector device
Optoelectronics Instrumentation and Data Processing·2016· 1 cited
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation
Semiconductors·2016· 4 cited
Photon far-infrared and submillimeter array detectors
Physics-Uspekhi·2015· 5 cited
Thermoactivated particularities of PbSnTe:In films conductivity
2015
Photon far-infrared and sub-millimeters array detectors
Uspekhi Fizicheskih Nauk·2015· 1 citedOpen Access
Effect of magnetic field on the sensitivity of PbSnTe:In films to THz radiation
2014· 4 cited
Current relaxation in PbSnTe:In in a strong magnetic field
2014
Temperature Resolution of Pb<inf>1−x</inf>Sn<inf>x</inf>Te:In-based photosensing film structures under illumination with blackbody radiation
2014· 1 cited
Temperature-dependent photocurrent decay in PbSnTe:In films
2014
Epitaxial CaF<inf>2</inf>/BaF<inf>2</inf>-on-Si layers and electronic properties of the interface with the substrate
2014
Terahertz detectors based on Pb1−x Sn x Te:In films
Optoelectronics Instrumentation and Data Processing·2013· 6 cited
Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range
Russian Microelectronics·2013· 6 cited
Effect of the material of injecting contacts on the CVCs of Pb1 − x Sn x Te:In films
Russian Microelectronics·2013· 2 cited
Effect of electron trapping centers on electrical and photoelectric properties of PbSnTe : In
Optoelectronics Instrumentation and Data Processing·2011
Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
InTech eBooks·2011Open Access
Effect of magnetic field on injection currents in PbSnTe:In films
2011
Terahertz imaging using intermediate thermal screen
2010· 1 cited
Current oscillations in PbSnTe:In films under non-illumination conditions
2010· 1 cited
Kinetics of transient photocurrents in PbSnTe∶In films exposed to THz radiation
2010
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Frequent Co-authors

А. Е. Клімов(39), А. Н. Акимов(13), V. S. Epov(13), I. G. Neizvestny(12), Sergey P. Suprun(9), V. N. Sherstyakova(8), V. V. Kubarev(5), Д. В. Ищенко(5), Н. С. Пащин(5), И. Г. Неизвестный(4), E. V. Fedosenko(4), A. B. Talochkin(4), Nikolai S. Paschin(3), V. G. Erkov(2), A. L. Aseev(2), Denis V. Ischenko(2), A. M. Palkin(2), Vladimir Kubarev(2), I. Yu. Borodin(2), E. L. Molodtsova(1)