Chuanbing Xiong

Physics and Astronomy · Physical Sciences

11h-index374citations27works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(22), ZnO doping and properties(13), Ga2O3 and related materials(9), Metal and Thin Film Mechanics(8), Acoustic Wave Resonator Technologies(3)

Publications27 total

Influence of Copper Substrate Area, Solder and Copper Foil Thickness on Maximum Output Light Intensity and Voltage of High Power Density LEDs
Chinese Journal of Luminescence·2024Open Access
Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging
Chinese Journal of Luminescence·2021
Effect of Number and Location of Eutectic Chips on Luminescent Properties of Ceramic Eutectic Packaged LED
Chinese Journal of Luminescence·2020
量子障壁構造SI基板GAN基緑光LEDの光電性能への影響【JST・京大機械翻訳】
Faguang Xuebao·2016
シリコンベースのGANベースLED薄膜チップの応力変調【JST・京大機械翻訳】
Faguang Xuebao·2016
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
Journal of Semiconductors·2015· 20 cited
High optical efficiency GaN based blue LED on silicon substrate
Zhongguo kexue. Wulixue Lixue Tianwenxue·2015· 11 citedOpen Access
Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate
Acta Physica Sinica·2015· 1 citedOpen Access
Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer
Acta Physica Sinica·2015Open Access
Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes
Applied Physics Letters·2014· 46 cited
High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
Applied Physics A·2014· 30 cited
Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities
Acta Physica Sinica·2014Open Access
Crystallographic tilting of AlN/GaN layers on miscut Si (111) substrates
Materials Letters·2013· 9 cited
The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes
Journal of Applied Physics·2013· 18 cited
Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Performance
Chinese Physics Letters·2013· 8 cited
Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (1 1 1)
Applied Surface Science·2011· 6 cited
Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates
Acta Physica Sinica·2011· 4 citedOpen Access
The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes
Acta Physica Sinica·2008· 1 citedOpen Access
Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate
Acta Physica Sinica·2008· 11 citedOpen Access
Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate
Science in China. Series E, Technological sciences/Science in China. Series E, Technological Sciences·2006· 22 cited
page 1 of 2Next →

Frequent Co-authors

Fengyi Jiang(16), Li Wang(11), Junlin Liu(10), Wenqing Fang(7), Yingwen Tang(7), Chunlan Mo(6), Guangxu Wang(6), Jianli Zhang(5), Jiang Feng-yi(5), Zhijue Quan(4), Qinghua Mao(4), Xuexin Peng(4), Chunnan Mo(3), Changda Zheng(3), Shuti Li(3), Binbin Huang(3), Zhang Chao-Yu(3), Huang Ji-Feng(3), Xiaoming Wu(2), Hechu Liu(2)