Wanjun Chen

National Institutes of Health — United States

Engineering · Physical Sciences

48h-index10.2kcitations333works1.62yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Carbide Semiconductor Technologies(157), GaN-based semiconductor devices and materials(143), Semiconductor materials and devices(87), Advancements in Semiconductor Devices and Circuit Design(54), Ga2O3 and related materials(53)

Publications332 total

Modified Montmorillonite Regulating Zinc Dendrites and Detrimental Side Reactions for Achieving High-Performance Aqueous Zinc Ion Batteries
Renewables·2025
On the In-Situ Dynamic On-Resistance of GaN Power Transistors Under Heavy-Ion Radiations
IEEE Electron Device Letters·2025
Molecular Insights into the Dual Mechanism of Bepristat 2a on Protein Disulfide Isomerase (PDI) Activity
The Journal of Physical Chemistry Letters·2025· 1 cited
Highly Repetitive Marx Generator With Charge-Control Self-Triggering GaN HEMTs
IEEE Transactions on Plasma Science·2025
Conductivity Modulation Enhancement in Thyristors Featuring Additional Interchip Carrier Injection for Ultrahigh Pulse Current Capability
IEEE Transactions on Electron Devices·2025
In Situ GaN Passivation p-GaN Gate HEMT With Synchronously Improved Baliga’s Figure-of-Merit and Superior Dynamic <i>R</i> <sub>ON</sub> Robustness
IEEE Electron Device Letters·2025
A Novel Wind Turbine Clutter Detection Algorithm for Weather Radar Data
Electronics·2025Open Access
Physical Modeling of Output Pulse Process in Pulse Generator Based on Drift Step Recovery Diodes
IEEE Transactions on Power Electronics·2025
High performance anode via Al-Zn alloy modification for aqueous zinc ion batteries
Journal of Physics Conference Series·2025Open Access
Investigation on Gate-Oxide Damage of SiC Power MOSFETs Induced by Heavy Ion
IEEE Transactions on Electron Devices·2025· 1 cited
First Experimental Demonstration of TiN<sub> <i>x</i> </sub>O<sub> <i>y</i> </sub> Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced <i>BV</i> and R<sub>on</sub>
IEEE Transactions on Electron Devices·2025· 2 cited
p-GaN Gate HEMT with the Buffer Hole Compensation Layer for Achieving Repetitive Avalanche-Like Breakdown Capability
2025
High Performance p-GaN Gate HEMT with TiN<sub>x</sub>O<sub>y</sub> Resistive Field Plate Structure
2025
Experiment and Simulation Study of Single-Event Burnout in GaN Event-Triggering HEMTs
2025
Comparative Analysis of Carrier Extraction Related Failure Mechanisms in P-GaN HEMTs Under Single-Event Burnouts
IEEE Transactions on Electron Devices·2025· 4 cited
New Observations on Carrier Transport and Thermal Behavior in IGBT During Heavy-ion Radiation
2025
2.5-kV 6.4-ns 100-kHz Repetitive GaN Marx Generator
2025
Activin A activation of Smad3 mitigates innate inflammation in mouse models of psoriasis and sepsis
Journal of Clinical Investigation·2025· 3 citedOpen Access
A Novel Low Loss Superjunction MOSFET with Hybrid Conduction Modes
2025
Effect of Gate Voltage Rise Time on Gate Charges for GaN HEMTs with Partially Depleted P-GaN Cap Layer
2025
page 1 of 17Next →

Frequent Co-authors

Bo Zhang(12), Joanne E. Konkel(7), Qi Zhou(7), Kevin J. Chen(5), Sharon M. Wahl(4), Wenwen Jin(4), Lingyun Sun(4), King‐Yuen Wong(4), Brian F. Zamarron(3), Pin Zhang(3), Ashok B. Kulkarni(3), Sylvain Perruche(3), Dunfang Zhang(3), Dandan Wang(3), Zhuoya Zhang(3), Sen Huang(3), Xinhua Wang(3), Wei Ke(3), Jinhan Zhang(3), Xinyu Liu(3)