P. F. Oleksenko

V.E. Lashkaryov Institute of Semiconductor Physics — UA

Engineering · Physical Sciences

7h-index209citations62works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(21), Photonic and Optical Devices(13), Phase-change materials and chalcogenides(11), Laser Design and Applications(8), Semiconductor Quantum Structures and Devices(6)

Publications62 total

Direct Surface Patterning Using Carbazole-Based Azopolymer
World Congress on Medical Physics and Biomedical Engineering, September 7 - 12, 2009, Munich, Germany·2022· 1 citedOpen Access
Peculiarities of Surface Relief Grating Formation in Nanomultilayer Structures Based on As2S3–Se Chalcogenide Glasses
World Congress on Medical Physics and Biomedical Engineering, September 7 - 12, 2009, Munich, Germany·2019· 1 citedOpen Access
Raman spectroscopy studies of As–Se–S chalcogenide glasses
BSU Digital Library (Belarusian State University)·2018Open Access
Surface patterning using As 2 S 3 : Mn–Se nanomultilayer structures
BSU Digital Library (Belarusian State University)·2018Open Access
Direct Magnetic Relief Recording Using As40S60: Mn–Se Nanocomposite Multilayer Structures
Nanoscale Research Letters·2017· 19 citedOpen Access
Properties of As2Se3 chalcogenide glasses modified by manganese
BSU Digital Library (Belarusian State University)·2017Open Access
Optical and Electron-Beam Recording of Surface Relief’s Using Ge<sub>5</sub>As<sub>37</sub>S<sub>58</sub>–Se Nanomultilayers as Registering Media
Journal of nano research·2016· 22 citedOpen Access
Direct surface relief formation on As2S3–Se nanomultilayers in dependence on polarization states of recording beams
Optical Materials·2015· 35 citedOpen Access
Nanocomposites based on chalcogenide glass semiconductor and metal phtalocyanine
Ceramics International·2015· 7 cited
Effect of doping by transitional elements on properties of chalcogenide glasses
Ceramics International·2015· 30 cited
Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation
Semiconductors·2013· 4 cited
ZnS:Cr and ZnSe:Cr thin‐film waveguide structures as electrically pumped laser media with an impact excitation mechanism
Annalen der Physik·2013· 16 citedOpen Access
Rapid method of determining the suitability of photophosphor suspensions for fabricating white LEDs
Journal of Optical Technology·2012· 4 cited
Effect of erbium fluoride doping on the photoluminescence of SiO x films
Semiconductors·2012· 5 cited
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing
Semiconductors·2011· 1 cited
Peculiarities of As-S glass structure doped with ytterbium
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 6 cited
On a new type electrically pumped lasers with impact excitation mechanism
2011
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”
Semiconductors·2011Open Access
Electronic states on silicon surface after deposition and annealing of SiO x films
Semiconductors·2011· 6 cited
Cr‐related energy levels and mechanism of Cr<sup>2+</sup> ion photorecharge in ZnS:Cr
physica status solidi (b)·2008· 18 cited
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Frequent Co-authors

Alexander V. Stronski(13), A. M. Kamuz(12), В. М. Сорокін(9), O. Paiuk(8), N. A. Vlasenko(8), Oksana N. Stril'chuk(8), L. I. Veligura(7), E. Achimova(6), A. Meshalkin(6), M. A. Mukhlyo(6), S. V. Svechnikov(6), Z. L. Denisova(5), G. A. Sukach(5), A. Prisacar(4), V. V. Batin(4), V. S. Kretulis(4), G. Triduh(3), Miroslav Vlček(3), Н. В. Сопинский(3), E. G. Gule(3)