Toshio Otagiri

Universidad Complutense de Madrid — Spain

Materials Science · Physical Sciences

3h-index86citations5works0.02yr avg
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Research Topics

Quasicrystal Structures and Properties(4), X-ray Diffraction in Crystallography(4), Physics of Superconductivity and Magnetism(1), Advanced Thermoelectric Materials and Devices(1), Crystal Structures and Properties(1)

Publications5 total

Modeling the spectral conductivity of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">Mn</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow></mml:math>quasicrystalline approximants: A phenomenological approach
Physical Review B·2005· 15 cited
Thermoelectric properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mrow><mml:mn>82.6</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Re</mml:mi><mml:mn>17.4</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Si</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mn>7</mml:mn><mml:mo>⩽</mml:mo><mml:mi>x</mml:mi><mml:mo>⩽</mml:mo><mml:mn>12</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1</mml:mn><mml:mo>∕</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:math>-cubic approximants
Physical Review B·2004· 41 cited
Contribution of local atomic arrangements and electronic structure to high electrical resistivity in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>82.6</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Re</mml:mi></mml:mrow><mml:mrow><mml:mn>17.4</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>7</mml:mn><mml:mn/><mml:mo>&lt;~</mml:mo><mml:mi>x</mml:mi><mml:mo>&lt;~</mml:mo><mml:mn>1</mml:mn><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>1/1-1/1-1/1 approximant
Physical review. B, Condensed matter·2003· 28 cited
Electronic structure and thermoelectric power of layered cobalt oxides
2003
Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant
MRS Proceedings·2003· 2 cited

Frequent Co-authors

Tsunehiro Takeuchi(5), Hiroki Sakagami(3), Uichiro Mizutani(3), Hirokazu Sato(2), Takeshi Kondo(1), Tomohide Onogi(1), Kenichi Kato(1), Takashi Kamiyama(1), Enrique Maciá(1), Takeshi Kondo(1), Hirohumi Takahashi(1), Akiko Fukushima(1)