Shinya Aikawa

Engineering · Physical Sciences

19h-index1.9kcitations111works0.32yr avg
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Research Topics

Thin-Film Transistor Technologies(39), Carbon Nanotubes in Composites(26), ZnO doping and properties(19), Graphene research and applications(17), Wireless Communication Networks Research(15)

Publications111 total

Room-temperature UV irradiation to improve stability of as-fabricated In-B-O thin-film transistors
2025
Boron-induced amorphization in In2O3 enabling flexible transparent conductive films
SSRN Electronic Journal·2025Open Access
Fabrication of SnSO<sub>4</sub> transparent thin-films using simultaneous oxidation and sulfurization annealing
2024
Optimization of post-deposition annealing conditions for p-type SnO fabrication by low-concentration hydrogen sputtering using SnO<sub>2</sub> sputtering target
2024
UV exposure in an oxygen atmosphere at room temperature as a new method for improvement of amorphous oxide TFT characteristics
2024
Strong amorphization in In<sub>2</sub>O<sub>3</sub>-based flexible transparent conductive films by hydrogen incorporation and higher suputtering pressure
2024
Characterization of Amorphous SnO&lt;sub&gt;2&lt;/sub&gt;:N Thin-films Prepared by RF Magnetron Sputtering in Ar/N&lt;sub&gt;2&lt;/sub&gt; Mixed Gas Atmosphere
IEEJ Transactions on Electronics Information and Systems·2024
Effect of Zn Composition Ratio in InZnO TFT CO&lt;sub&gt;2&lt;/sub&gt; Gas Sensor
IEEJ Transactions on Electronics Information and Systems·2024
Correlation between CO2 Sensitivity and Channel-Layer Thickness in In2O3 Thin-Film Transistor Gas Sensors
Electronics·2024· 3 citedOpen Access
In2O3-based thin-film transistors with a (400) polar surface for CO2 gas detection at 150 °C
Materials Science and Engineering B·2023· 12 cited
The Influence of Oxygen‐Related Defects on the Formation of In<sub>2</sub>O<sub>3</sub>‐Based Low‐Fluorescence Transparent Conducting Film
physica status solidi (a)·2023· 2 citedOpen Access
p-type conversion of distorted SnOx thin film by mild thermal annealing treatment in pure N2 environment
AIP Advances·2022· 3 citedOpen Access
Nitrogen incorporation in SnO&lt;sub&gt;2&lt;/sub&gt; matrix for passivation of oxygen vacancy and hole generation
2022
Indium oxide-based thin film transistor with high CO&lt;sub&gt;2&lt;/sub&gt; sensitive (400) plane
2022
Room-temperature processable highly amorphous transparent B-doped In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; for use as a flexible conductive film
2022
Post-deposition N&lt;sub&gt;2&lt;/sub&gt; annealing of n-type SnO&lt;sub&gt;x&lt;/sub&gt; thin-films for carrier-type conversion
2021
Improvement of ReRAM characteristics by insertion of SiO x layer at the ZrO x /electrode interfaces
The Japan Society of Applied Physics·2021
Mobility improvement of B-doped In 2 O 3 transparent conductive film with a small amount of impurity
The Japan Society of Applied Physics·2021
Charge transfer and carrier-type conversion of n-type SnO 2 thin-film by N 2 annealing
The Japan Society of Applied Physics·2021
Dopant concentration dependence of surface roughness and electrical conductivity on CaF 2 -doped In 2 O 3 transparent conductive film
The Japan Society of Applied Physics·2021
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Frequent Co-authors

Kazuhito Tsukagoshi(15), Takio Kizu(15), Toshihide Nabatame(12), Shohei Chiashi(9), Shigeo Maruyama(9), Erik Einarsson(8), Nobuhiko Mitoma(8), Eiichi Nishikawa(8), Xu Gao(5), Yusuke Asai(5), Takeshi Onizawa(5), Junichiro Shiomi(4), M. Shimizu(4), Meng-Fang Lin(4), Theerapol Thurakitseree(4), Akio Ohta(4), Sivasankaran Harish(3), Taiki Inoue(3), Pei Zhao(3), Yasuhisa Nakamura(3)